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Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence

Irish, Austin LU ; Zou, Xianshao LU ; Barrigon, Enrique LU ; D’Acunto, Giulio ; Timm, Rainer LU orcid ; T Borgström, Magnus LU and Yartsev, Arkady LU orcid (2022) In Nano Express 3(4).
Abstract

We demonstrate a significant improvement in the optical performance of GaAs nanowires achieved using a mixed nitrogen-hydrogen plasma which passivates surface states and reduces the rate of nonradiative recombination. This has been confirmed by time-resolved photoluminescence measurements. At room temperature, the intensity and lifetime of radiative recombination in the plasma-treated nanowires was several times greater than that of the as-grown GaAs nanowires. Low-temperature measurements corroborated these findings, revealing a dramatic increase in photoluminescence by two orders of magnitude. Photoelectron spectroscopy of plasma passivated nanowires demonstrated a yearlong stability achieved through the replacement of surface oxygen... (More)

We demonstrate a significant improvement in the optical performance of GaAs nanowires achieved using a mixed nitrogen-hydrogen plasma which passivates surface states and reduces the rate of nonradiative recombination. This has been confirmed by time-resolved photoluminescence measurements. At room temperature, the intensity and lifetime of radiative recombination in the plasma-treated nanowires was several times greater than that of the as-grown GaAs nanowires. Low-temperature measurements corroborated these findings, revealing a dramatic increase in photoluminescence by two orders of magnitude. Photoelectron spectroscopy of plasma passivated nanowires demonstrated a yearlong stability achieved through the replacement of surface oxygen with nitrogen. Furthermore, the process removed the As0 defects observed on non-passivated nanowires which are known to impair devices. The results validate plasma as a nitridation technique suitable for nanoscale GaAs crystals. As a simple ex situ procedure with modest temperature and vacuum requirements, it represents an easy method for incorporating GaAs nanostructures into optoelectronic devices.

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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
GaAs, GaN, nanowire, nitridation, photoelectron spectroscopy, plasma, time-resolved photoluminescence
in
Nano Express
volume
3
issue
4
article number
045008
publisher
IOP Publishing
external identifiers
  • scopus:85147141901
DOI
10.1088/2632-959X/acb1cc
language
English
LU publication?
yes
id
54a4b7a1-1ccd-4b8d-a47a-57214e188638
date added to LUP
2023-02-14 10:38:35
date last changed
2023-11-21 16:20:47
@article{54a4b7a1-1ccd-4b8d-a47a-57214e188638,
  abstract     = {{<p>We demonstrate a significant improvement in the optical performance of GaAs nanowires achieved using a mixed nitrogen-hydrogen plasma which passivates surface states and reduces the rate of nonradiative recombination. This has been confirmed by time-resolved photoluminescence measurements. At room temperature, the intensity and lifetime of radiative recombination in the plasma-treated nanowires was several times greater than that of the as-grown GaAs nanowires. Low-temperature measurements corroborated these findings, revealing a dramatic increase in photoluminescence by two orders of magnitude. Photoelectron spectroscopy of plasma passivated nanowires demonstrated a yearlong stability achieved through the replacement of surface oxygen with nitrogen. Furthermore, the process removed the As<sup>0</sup> defects observed on non-passivated nanowires which are known to impair devices. The results validate plasma as a nitridation technique suitable for nanoscale GaAs crystals. As a simple ex situ procedure with modest temperature and vacuum requirements, it represents an easy method for incorporating GaAs nanostructures into optoelectronic devices.</p>}},
  author       = {{Irish, Austin and Zou, Xianshao and Barrigon, Enrique and D’Acunto, Giulio and Timm, Rainer and T Borgström, Magnus and Yartsev, Arkady}},
  keywords     = {{GaAs; GaN; nanowire; nitridation; photoelectron spectroscopy; plasma; time-resolved photoluminescence}},
  language     = {{eng}},
  number       = {{4}},
  publisher    = {{IOP Publishing}},
  series       = {{Nano Express}},
  title        = {{Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence}},
  url          = {{http://dx.doi.org/10.1088/2632-959X/acb1cc}},
  doi          = {{10.1088/2632-959X/acb1cc}},
  volume       = {{3}},
  year         = {{2022}},
}