Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence
(2022) In Nano Express 3(4).- Abstract
We demonstrate a significant improvement in the optical performance of GaAs nanowires achieved using a mixed nitrogen-hydrogen plasma which passivates surface states and reduces the rate of nonradiative recombination. This has been confirmed by time-resolved photoluminescence measurements. At room temperature, the intensity and lifetime of radiative recombination in the plasma-treated nanowires was several times greater than that of the as-grown GaAs nanowires. Low-temperature measurements corroborated these findings, revealing a dramatic increase in photoluminescence by two orders of magnitude. Photoelectron spectroscopy of plasma passivated nanowires demonstrated a yearlong stability achieved through the replacement of surface oxygen... (More)
We demonstrate a significant improvement in the optical performance of GaAs nanowires achieved using a mixed nitrogen-hydrogen plasma which passivates surface states and reduces the rate of nonradiative recombination. This has been confirmed by time-resolved photoluminescence measurements. At room temperature, the intensity and lifetime of radiative recombination in the plasma-treated nanowires was several times greater than that of the as-grown GaAs nanowires. Low-temperature measurements corroborated these findings, revealing a dramatic increase in photoluminescence by two orders of magnitude. Photoelectron spectroscopy of plasma passivated nanowires demonstrated a yearlong stability achieved through the replacement of surface oxygen with nitrogen. Furthermore, the process removed the As0 defects observed on non-passivated nanowires which are known to impair devices. The results validate plasma as a nitridation technique suitable for nanoscale GaAs crystals. As a simple ex situ procedure with modest temperature and vacuum requirements, it represents an easy method for incorporating GaAs nanostructures into optoelectronic devices.
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- author
- Irish, Austin LU ; Zou, Xianshao LU ; Barrigon, Enrique LU ; D’Acunto, Giulio ; Timm, Rainer LU ; T Borgström, Magnus LU and Yartsev, Arkady LU
- organization
- publishing date
- 2022-12
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- GaAs, GaN, nanowire, nitridation, photoelectron spectroscopy, plasma, time-resolved photoluminescence
- in
- Nano Express
- volume
- 3
- issue
- 4
- article number
- 045008
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85147141901
- DOI
- 10.1088/2632-959X/acb1cc
- language
- English
- LU publication?
- yes
- id
- 54a4b7a1-1ccd-4b8d-a47a-57214e188638
- date added to LUP
- 2023-02-14 10:38:35
- date last changed
- 2023-11-21 16:20:47
@article{54a4b7a1-1ccd-4b8d-a47a-57214e188638, abstract = {{<p>We demonstrate a significant improvement in the optical performance of GaAs nanowires achieved using a mixed nitrogen-hydrogen plasma which passivates surface states and reduces the rate of nonradiative recombination. This has been confirmed by time-resolved photoluminescence measurements. At room temperature, the intensity and lifetime of radiative recombination in the plasma-treated nanowires was several times greater than that of the as-grown GaAs nanowires. Low-temperature measurements corroborated these findings, revealing a dramatic increase in photoluminescence by two orders of magnitude. Photoelectron spectroscopy of plasma passivated nanowires demonstrated a yearlong stability achieved through the replacement of surface oxygen with nitrogen. Furthermore, the process removed the As<sup>0</sup> defects observed on non-passivated nanowires which are known to impair devices. The results validate plasma as a nitridation technique suitable for nanoscale GaAs crystals. As a simple ex situ procedure with modest temperature and vacuum requirements, it represents an easy method for incorporating GaAs nanostructures into optoelectronic devices.</p>}}, author = {{Irish, Austin and Zou, Xianshao and Barrigon, Enrique and D’Acunto, Giulio and Timm, Rainer and T Borgström, Magnus and Yartsev, Arkady}}, keywords = {{GaAs; GaN; nanowire; nitridation; photoelectron spectroscopy; plasma; time-resolved photoluminescence}}, language = {{eng}}, number = {{4}}, publisher = {{IOP Publishing}}, series = {{Nano Express}}, title = {{Nitrogen plasma passivation of GaAs nanowires resolved by temperature dependent photoluminescence}}, url = {{http://dx.doi.org/10.1088/2632-959X/acb1cc}}, doi = {{10.1088/2632-959X/acb1cc}}, volume = {{3}}, year = {{2022}}, }