Interface Modification and Characterization of Nanostructured Semiconductors : A Bridge to Contemporary Electronics
(2024)- Abstract
- This research presents advancements into the fabrication, operation and characterization of electronic
nanomaterials and devices. It focuses on the interfaces of metals, oxides and semiconductors and
developing techniques to improve their integration into devices. Covering nanoelectronics from
photovoltaics to circuit elements, a combined suite of scanning probe and X-ray techniques was used
to provide insight into structural and electronic properties.
Scanning probe techniques such as piezoresponse force microscopy corroborated the formation of
ultrathin ferroelectric hafnia films. A unique Kelvin probe force microscopy method for nondestructively
measuring directly on nanowire arrays complemented electron beam... (More) - This research presents advancements into the fabrication, operation and characterization of electronic
nanomaterials and devices. It focuses on the interfaces of metals, oxides and semiconductors and
developing techniques to improve their integration into devices. Covering nanoelectronics from
photovoltaics to circuit elements, a combined suite of scanning probe and X-ray techniques was used
to provide insight into structural and electronic properties.
Scanning probe techniques such as piezoresponse force microscopy corroborated the formation of
ultrathin ferroelectric hafnia films. A unique Kelvin probe force microscopy method for nondestructively
measuring directly on nanowire arrays complemented electron beam induced current in the
investigation of photovoltaic p-n junctions. Temperature- and time-dependent photoluminescence
spectroscopy was used show how nitrogen plasma treatment could increase GaAs nanowire solar cell
efficiency, while photoelectron spectroscopy demonstrated surface conversion to GaN and long-term
passivation.
X-ray radiation from synchrotrons such as MAX IV enabled the probing of novel circuit components. Xray
absorption spectroscopy helped to explain reactive sputtering of TiN, connecting electrode texturing
with device endurance and remanent polarization. Photoemission spectroscopy was integral to
understanding the impact of device fabrication on thin film behavior. For resistive random-access
memory, it controverted conventional wisdom by showing that interlayer oxidation protected key device
functionality. In ferroelectric devices it proved the opposite, highlighting the necessity for short
timescale thermal processes to limit film decomposition. Finally, operando hard X-ray photoelectron
spectroscopy was employed to follow ferroelectric switching in real time. Synchrotron compatible
devices were developed, and characterization of buried interfaces revealed a polarization dependent,
reversible redox between HZO and InAs which, if left unchecked, ultimately leads to breakdown.
Generally, this work confirms that, independent of the specific material and device application, it is
crucial to have a large characterization toolbox at hand, especially one that includes surface-sensitive
techniques tailored for operando measurements at the micro- and nanoscale. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/d6c53a0a-bbfd-46a4-b15d-32fead4b6a40
- author
- Irish, Austin LU
- supervisor
-
- Rainer Timm LU
- opponent
-
- Professor Hinkle, Christopher, University of Notre Dame.
- organization
- publishing date
- 2024-09-23
- type
- Thesis
- publication status
- published
- subject
- keywords
- III-V, XPS, AFM, electronics, hafnium oxide, Photovoltaics
- pages
- 54 pages
- publisher
- Lund University
- defense location
- Rydbergsalen, Department of Physics. Join via zoom: https://lu-se.zoom.us/j/67139588544
- defense date
- 2024-10-18 13:15:00
- ISBN
- 978-91-8039-981-4
- 978-91-8039-980-7
- language
- English
- LU publication?
- yes
- id
- d6c53a0a-bbfd-46a4-b15d-32fead4b6a40
- date added to LUP
- 2024-09-23 11:33:26
- date last changed
- 2025-04-04 14:04:04
@phdthesis{d6c53a0a-bbfd-46a4-b15d-32fead4b6a40,
abstract = {{This research presents advancements into the fabrication, operation and characterization of electronic<br/>nanomaterials and devices. It focuses on the interfaces of metals, oxides and semiconductors and<br/>developing techniques to improve their integration into devices. Covering nanoelectronics from<br/>photovoltaics to circuit elements, a combined suite of scanning probe and X-ray techniques was used<br/>to provide insight into structural and electronic properties.<br/>Scanning probe techniques such as piezoresponse force microscopy corroborated the formation of<br/>ultrathin ferroelectric hafnia films. A unique Kelvin probe force microscopy method for nondestructively<br/>measuring directly on nanowire arrays complemented electron beam induced current in the<br/>investigation of photovoltaic p-n junctions. Temperature- and time-dependent photoluminescence<br/>spectroscopy was used show how nitrogen plasma treatment could increase GaAs nanowire solar cell<br/>efficiency, while photoelectron spectroscopy demonstrated surface conversion to GaN and long-term<br/>passivation.<br/>X-ray radiation from synchrotrons such as MAX IV enabled the probing of novel circuit components. Xray<br/>absorption spectroscopy helped to explain reactive sputtering of TiN, connecting electrode texturing<br/>with device endurance and remanent polarization. Photoemission spectroscopy was integral to<br/>understanding the impact of device fabrication on thin film behavior. For resistive random-access<br/>memory, it controverted conventional wisdom by showing that interlayer oxidation protected key device<br/>functionality. In ferroelectric devices it proved the opposite, highlighting the necessity for short<br/>timescale thermal processes to limit film decomposition. Finally, operando hard X-ray photoelectron<br/>spectroscopy was employed to follow ferroelectric switching in real time. Synchrotron compatible<br/>devices were developed, and characterization of buried interfaces revealed a polarization dependent,<br/>reversible redox between HZO and InAs which, if left unchecked, ultimately leads to breakdown.<br/>Generally, this work confirms that, independent of the specific material and device application, it is<br/>crucial to have a large characterization toolbox at hand, especially one that includes surface-sensitive<br/>techniques tailored for operando measurements at the micro- and nanoscale.}},
author = {{Irish, Austin}},
isbn = {{978-91-8039-981-4}},
keywords = {{III-V; XPS; AFM; electronics; hafnium oxide; Photovoltaics}},
language = {{eng}},
month = {{09}},
publisher = {{Lund University}},
school = {{Lund University}},
title = {{Interface Modification and Characterization of Nanostructured Semiconductors : A Bridge to Contemporary Electronics}},
url = {{https://lup.lub.lu.se/search/files/195694944/Thesis_Austin_Irish_LUCRIS.pdf}},
year = {{2024}},
}