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Comparision between (111)B and (100) III-V nanowhiskers

Ohlsson, Jonas LU ; Persson, Ann LU ; Wallenberg, Reine LU ; Sass, T. ; Deppert, Knut LU orcid and Samuelson, Lars LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
Abstract
Epitaxial III-V nanowhiskers have been grown with orientation in the [111]B and [100] directions. While the nature of the crystal structure in the (111)B type of whiskers varies more or less at random between hexagonal (wurtzite) and cubic (zincblende) structure, the (100) type whiskers are of single crystal zincblende structure. We show that the bounding surface facets of the whiskers are either {110} type (zincblende) or the related {1120} facets (wurtzite), giving a rectangular cross-section of (100) whiskers and a hexagonal cross section of (111)B whiskers. The variations in crystal structure and facet type are discussed in connection to the electronic properties of the whiskers and the choice of whisker type for applications in... (More)
Epitaxial III-V nanowhiskers have been grown with orientation in the [111]B and [100] directions. While the nature of the crystal structure in the (111)B type of whiskers varies more or less at random between hexagonal (wurtzite) and cubic (zincblende) structure, the (100) type whiskers are of single crystal zincblende structure. We show that the bounding surface facets of the whiskers are either {110} type (zincblende) or the related {1120} facets (wurtzite), giving a rectangular cross-section of (100) whiskers and a hexagonal cross section of (111)B whiskers. The variations in crystal structure and facet type are discussed in connection to the electronic properties of the whiskers and the choice of whisker type for applications in electronics and photonics (Less)
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author
; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
GaAs, InAs, InP, electronics, B, photonics, B whiskers, crystal structure, epitaxial III-V nanowhiskers, zincblende, hexagonal structure, wurtzite, cubic structure, bounding surface facets, rectangular cross section, hexagonal cross section, electronic properties, facet type
host publication
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
conference location
Malmö, Sweden
conference dates
2002-06-24 - 2002-06-28
language
English
LU publication?
yes
id
23220652-2f02-48b1-9a34-ae2d0edc9419 (old id 610453)
date added to LUP
2016-04-04 10:28:01
date last changed
2019-03-08 03:30:17
@inproceedings{23220652-2f02-48b1-9a34-ae2d0edc9419,
  abstract     = {{Epitaxial III-V nanowhiskers have been grown with orientation in the [111]B and [100] directions. While the nature of the crystal structure in the (111)B type of whiskers varies more or less at random between hexagonal (wurtzite) and cubic (zincblende) structure, the (100) type whiskers are of single crystal zincblende structure. We show that the bounding surface facets of the whiskers are either {110} type (zincblende) or the related {1120} facets (wurtzite), giving a rectangular cross-section of (100) whiskers and a hexagonal cross section of (111)B whiskers. The variations in crystal structure and facet type are discussed in connection to the electronic properties of the whiskers and the choice of whisker type for applications in electronics and photonics}},
  author       = {{Ohlsson, Jonas and Persson, Ann and Wallenberg, Reine and Sass, T. and Deppert, Knut and Samuelson, Lars}},
  booktitle    = {{7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science}},
  keywords     = {{GaAs; InAs; InP; electronics; B; photonics; B whiskers; crystal structure; epitaxial III-V nanowhiskers; zincblende; hexagonal structure; wurtzite; cubic structure; bounding surface facets; rectangular cross section; hexagonal cross section; electronic properties; facet type}},
  language     = {{eng}},
  publisher    = {{Lund University}},
  title        = {{Comparision between (111)B and (100) III-V nanowhiskers}},
  year         = {{2002}},
}