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Coupling between lateral modes in a vertical resonant tunneling structure

Gustafson, Boel LU ; Csontos, Dan LU ; Suhara, M.; Wernersson, Lars-Erik LU ; Seifert, Werner LU ; Xu, Hongqi LU and Samuelson, Lars LU (2002) In Physica E: Low-Dimensional Systems and Nanostructures 13(2-4). p.950-953
Abstract
We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
quantum dot structure, 4.2 K, vertical resonant tunneling structure, vertical electron transport, laterally constricted resonant tunneling transistor, lateral modes coupling, scattering-matrix approach, Landauer formalism, current-voltage measurements
in
Physica E: Low-Dimensional Systems and Nanostructures
volume
13
issue
2-4
pages
950 - 953
publisher
Elsevier
external identifiers
  • wos:000176869100199
  • other:CODEN: PELNFM
  • scopus:0036492976
ISSN
1386-9477
DOI
10.1016/S1386-9477(02)00242-4
language
English
LU publication?
yes
id
28709d14-d47a-4b43-a6a5-1802ddc9c083 (old id 611332)
date added to LUP
2007-12-27 13:13:58
date last changed
2017-01-01 07:18:31
@article{28709d14-d47a-4b43-a6a5-1802ddc9c083,
  abstract     = {We present experimental results and theoretical calculations of the vertical electron transport through a laterally constricted resonant tunneling transistor. Current-voltage measurements at 4.2 K show numerous current peaks that exhibit a complex dependence on the applied gate voltage. A scattering-matrix approach combined with the Landauer formalism was used to perform quantum mechanical calculations of the electron transport through a quantum dot structure with laterally confined emitter and collector regions. The simulations qualitatively reproduce the measured data, suggesting a strong coupling between the lateral modes in the quantum dot and the collector},
  author       = {Gustafson, Boel and Csontos, Dan and Suhara, M. and Wernersson, Lars-Erik and Seifert, Werner and Xu, Hongqi and Samuelson, Lars},
  issn         = {1386-9477},
  keyword      = {quantum dot structure,4.2 K,vertical resonant tunneling structure,vertical electron transport,laterally constricted resonant tunneling transistor,lateral modes coupling,scattering-matrix approach,Landauer formalism,current-voltage measurements},
  language     = {eng},
  number       = {2-4},
  pages        = {950--953},
  publisher    = {Elsevier},
  series       = {Physica E: Low-Dimensional Systems and Nanostructures},
  title        = {Coupling between lateral modes in a vertical resonant tunneling structure},
  url          = {http://dx.doi.org/10.1016/S1386-9477(02)00242-4},
  volume       = {13},
  year         = {2002},
}