Vertical high mobility wrap-gated InAs nanowire transistor
(2005) Device Research Conference, 2005 1.- Abstract
- We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm<sup>2</sup>/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of V<sub>g</sub> = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/616176
- author
- Bryllert, Tomas LU ; Samuelson, Lars LU ; Jensen, L and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2005
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- wrap gated field effect transistor, transconductance, current saturation, sub threshold characteristics, InAs, -0.15 V, high mobility, nanowire transistor
- host publication
- 63rd Device Research Conference Digest, 2005. DRC '05
- volume
- 1
- pages
- 2 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- Device Research Conference, 2005
- conference location
- Santa Barbara, CA, United States
- conference dates
- 2005-06-20 - 2005-06-22
- external identifiers
-
- scopus:33646243041
- ISBN
- 0-7803-9040-7
- DOI
- 10.1109/DRC.2005.1553100
- language
- English
- LU publication?
- yes
- id
- a5c5b9c9-20b3-46c4-a73d-6818658c2336 (old id 616176)
- date added to LUP
- 2016-04-04 10:58:56
- date last changed
- 2022-01-29 21:09:21
@inproceedings{a5c5b9c9-20b3-46c4-a73d-6818658c2336, abstract = {{We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm<sup>2</sup>/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of V<sub>g</sub> = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude}}, author = {{Bryllert, Tomas and Samuelson, Lars and Jensen, L and Wernersson, Lars-Erik}}, booktitle = {{63rd Device Research Conference Digest, 2005. DRC '05}}, isbn = {{0-7803-9040-7}}, keywords = {{wrap gated field effect transistor; transconductance; current saturation; sub threshold characteristics; InAs; -0.15 V; high mobility; nanowire transistor}}, language = {{eng}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Vertical high mobility wrap-gated InAs nanowire transistor}}, url = {{http://dx.doi.org/10.1109/DRC.2005.1553100}}, doi = {{10.1109/DRC.2005.1553100}}, volume = {{1}}, year = {{2005}}, }