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Vertical high mobility wrap-gated InAs nanowire transistor

Bryllert, Tomas LU ; Samuelson, Lars LU ; Jensen, L and Wernersson, Lars-Erik LU (2005) Device Research Conference, 2005 1.
Abstract
We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm<sup>2</sup>/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of V<sub>g</sub> = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
wrap gated field effect transistor, transconductance, current saturation, sub threshold characteristics, InAs, -0.15 V, high mobility, nanowire transistor
host publication
63rd Device Research Conference Digest, 2005. DRC '05
volume
1
pages
2 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
Device Research Conference, 2005
conference location
Santa Barbara, CA, United States
conference dates
2005-06-20 - 2005-06-22
external identifiers
  • scopus:33646243041
ISBN
0-7803-9040-7
DOI
10.1109/DRC.2005.1553100
language
English
LU publication?
yes
id
a5c5b9c9-20b3-46c4-a73d-6818658c2336 (old id 616176)
date added to LUP
2016-04-04 10:58:56
date last changed
2020-12-08 01:02:18
@inproceedings{a5c5b9c9-20b3-46c4-a73d-6818658c2336,
  abstract     = {We demonstrate a wrap-gated field effect transistor based on a matrix of vertically standing InAs nanowires (Jensen, et. al., 2004). A lower limit of the mobility, derived from the transconductance, is on the order of 3000 cm&lt;sup&gt;2&lt;/sup&gt;/Vs. The narrow ~100 nm channels show excellent current saturation and a threshold of V&lt;sub&gt;g&lt;/sub&gt; = -0.15 V. The sub-threshold characteristics show a close to ideal slope of 62mV/decade over two orders of magnitude},
  author       = {Bryllert, Tomas and Samuelson, Lars and Jensen, L and Wernersson, Lars-Erik},
  booktitle    = {63rd Device Research Conference Digest, 2005. DRC '05},
  isbn         = {0-7803-9040-7},
  language     = {eng},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  title        = {Vertical high mobility wrap-gated InAs nanowire transistor},
  url          = {http://dx.doi.org/10.1109/DRC.2005.1553100},
  doi          = {10.1109/DRC.2005.1553100},
  volume       = {1},
  year         = {2005},
}