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A 19.5-GHz 28-nm Class-C CMOS VCO, with a reasonably rigorous result on 1/f noise upconversion caused by short-channel effects

Franceschin, Alessandro ; Franceschin, Alessandro ; Andreani, Pietro LU ; Padovan, Fabio ; Bassi, Matteo and Bevilacqua, Andrea (2020) In IEEE Journal of Solid-State Circuits 55(7). p.1842-1853
Abstract

Class-C operation is leveraged to implement a K-band CMOS voltage-controlled oscillator (VCO) where the upconversion of 1/f current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as -112 dBc/Hz at 1-MHz offset (-86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of -185 dBc/Hz. The design is complemented by a theoretical investigation of 1/f noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the 1/f3 region.

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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
1/f noise, phase noise, voltage-controlled oscillators (VCOs)
in
IEEE Journal of Solid-State Circuits
volume
55
issue
7
article number
9085341
pages
12 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85087445690
ISSN
0018-9200
DOI
10.1109/JSSC.2020.2987702
language
English
LU publication?
yes
id
63a35027-3e78-4336-a5aa-aa3c47601217
date added to LUP
2020-07-15 13:23:59
date last changed
2020-10-07 07:01:43
@article{63a35027-3e78-4336-a5aa-aa3c47601217,
  abstract     = {<p>Class-C operation is leveraged to implement a K-band CMOS voltage-controlled oscillator (VCO) where the upconversion of 1/f current noise from the cross-coupled transistors in the oscillator core is robustly contained at a very low level. Implemented in a bulk 28-nm CMOS technology, the 12%-tuning-range VCO shows a phase noise as low as -112 dBc/Hz at 1-MHz offset (-86 dBc/Hz at 100 kHz offset) from a 19.5 GHz carrier while consuming 20.7 mW, achieving a figure of merit (FoM) of -185 dBc/Hz. The design is complemented by a theoretical investigation of 1/f noise upconversion caused by short-channel effects in the cross-coupled transistors, obtaining the first instance of a closed-form phase noise expression in the 1/f3 region. </p>},
  author       = {Franceschin, Alessandro and Franceschin, Alessandro and Andreani, Pietro and Padovan, Fabio and Bassi, Matteo and Bevilacqua, Andrea},
  issn         = {0018-9200},
  language     = {eng},
  number       = {7},
  pages        = {1842--1853},
  publisher    = {IEEE - Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Journal of Solid-State Circuits},
  title        = {A 19.5-GHz 28-nm Class-C CMOS VCO, with a reasonably rigorous result on 1/f noise upconversion caused by short-channel effects},
  url          = {http://dx.doi.org/10.1109/JSSC.2020.2987702},
  doi          = {10.1109/JSSC.2020.2987702},
  volume       = {55},
  year         = {2020},
}