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InAs1-xPx Nanowires for Device Engineering

Persson, Ann LU ; Björk, Mikael LU ; Jeppesen, Sören LU ; Wagner, Jakob LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2006) In Nano Letters 6(3). p.403-407
Abstract
We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P

concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter

of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution

transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual

heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements

we extract a... (More)
We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P

concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter

of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution

transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual

heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements

we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2

eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at

room temperature. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
6
issue
3
pages
403 - 407
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:16522031
  • wos:000236049800013
  • scopus:33645453261
  • pmid:16522031
ISSN
1530-6992
DOI
10.1021/nl052181e
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
id
22962a94-7e19-47e5-9bb6-63fe0ba1c1fc (old id 644133)
alternative location
http://pubs.acs.org/cgi-bin/article.cgi/nalefd/2006/6/i03/pdf/nl052181e.pdf
date added to LUP
2016-04-04 11:06:19
date last changed
2022-01-29 21:20:12
@article{22962a94-7e19-47e5-9bb6-63fe0ba1c1fc,
  abstract     = {{We present the growth of homogeneous InAs1-xPx nanowires as well as InAs1-xPx heterostructure segments in InAs nanowires with P<br/><br>
concentrations varying from 22% to 100%. The incorporation of P has been studied as a function of TBP/TBAs ratio, temperature, and diameter<br/><br>
of the wires. The crystal structure of the InAs as well as the InAs1-xPx segments were found to be wurtzite as determined from high-resolution<br/><br>
transmission electron microscopy. Furthermore, temperature-dependent electrical transport measurements were performed on individual<br/><br>
heterostructured wires to extract the conduction band offset of InAs1-xPx relative to InAs as a function of composition. From these measurements<br/><br>
we extract a value of the linear coefficient of the conduction band versus x of 0.6 eV and a nonlinear coefficient, or bowing parameter, of 0.2<br/><br>
eV. Finally, homogeneous InAs0.8P0.2 nanowires were shown to have a nondegenerate n-type doping and function as field-effect transistors at<br/><br>
room temperature.}},
  author       = {{Persson, Ann and Björk, Mikael and Jeppesen, Sören and Wagner, Jakob and Wallenberg, Reine and Samuelson, Lars}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{3}},
  pages        = {{403--407}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{InAs1-xPx Nanowires for Device Engineering}},
  url          = {{http://dx.doi.org/10.1021/nl052181e}},
  doi          = {{10.1021/nl052181e}},
  volume       = {{6}},
  year         = {{2006}},
}