Understanding the 3D structure of GaAs nanowires
(2007) In Nanotechnology 18(48).- Abstract
- The effects of lamellar twinning in epitaxial particle-assisted GaAs <111>B nanowires are investigated in an extensive high resolution electron
 microscopy (HRTEM) study of the low index zones <-100>, <-1-10>, <1-1-1> and
 <1-1-2>. As these directions are non-parallel to the (-1-1-1) twin planes we find
 that the twin segments exhibit two different zone axes as a consequence of
 twinning. In the first three cases the alternative zones were found to be <1-2-2>
 <11-4> and <11-5>. These findings are supported by a comparison of
 experimental HRTEM images and multi-slice simulations along with fast
 Fourier transform mapping. From the... (More)
- The effects of lamellar twinning in epitaxial particle-assisted GaAs <111>B nanowires are investigated in an extensive high resolution electron
 microscopy (HRTEM) study of the low index zones <-100>, <-1-10>, <1-1-1> and
 <1-1-2>. As these directions are non-parallel to the (-1-1-1) twin planes we find
 that the twin segments exhibit two different zone axes as a consequence of
 twinning. In the first three cases the alternative zones were found to be <1-2-2>
 <11-4> and <11-5>. These findings are supported by a comparison of
 experimental HRTEM images and multi-slice simulations along with fast
 Fourier transform mapping. From the appearance of non-overlapping regions
 we conclude that the nanowires are bound by {111} facets only. The twin
 formation and the development of the stable side facets are discussed (Less)
    Please use this url to cite or link to this publication:
    https://lup.lub.lu.se/record/644203
- author
- 						Karlsson, Lisa
				LU
	; 						Dick Thelander, Kimberly
				LU
	; 						Wagner, Jakob
				LU
	; 						Malm, Jan-Olle
				LU
	; 						Deppert, Knut
				LU
				 ; 						Samuelson, Lars
				LU
	 and 						Wallenberg, Reine
				LU ; 						Samuelson, Lars
				LU
	 and 						Wallenberg, Reine
				LU
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 18
- issue
- 48
- article number
- 485717
- publisher
- IOP Publishing
- external identifiers
- 
                - wos:000250725600037
- scopus:35748984098
 
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/18/48/485717
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- e1a45554-b89a-4fa0-9e74-cb7e5855d398 (old id 644203)
- date added to LUP
- 2016-04-01 11:38:52
- date last changed
- 2025-10-14 13:13:53
@article{e1a45554-b89a-4fa0-9e74-cb7e5855d398,
  abstract     = {{The effects of lamellar twinning in epitaxial particle-assisted GaAs <111>B nanowires are investigated in an extensive high resolution electron<br/><br>
microscopy (HRTEM) study of the low index zones <-100>, <-1-10>, <1-1-1> and<br/><br>
<1-1-2>. As these directions are non-parallel to the (-1-1-1) twin planes we find<br/><br>
that the twin segments exhibit two different zone axes as a consequence of<br/><br>
twinning. In the first three cases the alternative zones were found to be <1-2-2><br/><br>
<11-4> and <11-5>. These findings are supported by a comparison of<br/><br>
experimental HRTEM images and multi-slice simulations along with fast<br/><br>
Fourier transform mapping. From the appearance of non-overlapping regions<br/><br>
we conclude that the nanowires are bound by {111} facets only. The twin<br/><br>
formation and the development of the stable side facets are discussed}},
  author       = {{Karlsson, Lisa and Dick Thelander, Kimberly and Wagner, Jakob and Malm, Jan-Olle and Deppert, Knut and Samuelson, Lars and Wallenberg, Reine}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{48}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Understanding the 3D structure of GaAs nanowires}},
  url          = {{http://dx.doi.org/10.1088/0957-4484/18/48/485717}},
  doi          = {{10.1088/0957-4484/18/48/485717}},
  volume       = {{18}},
  year         = {{2007}},
}