Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Aerotaxy : gas-phase epitaxy of quasi 1D nanostructures

Sivakumar, Sudhakar LU ; Persson, Axel R. LU orcid ; Metaferia, Wondwosen LU ; Heurlin, Magnus LU ; Wallenberg, Reine LU ; Samuelson, Lars LU ; Deppert, Knut LU orcid ; Johansson, Jonas LU orcid and Magnusson, Martin H. LU (2021) In Nanotechnology 32(2). p.25605-25605
Abstract

Cost- and resource-efficient growth is necessary for many applications of semiconductor nanowires. We here present the design, operational details and theory behind Aerotaxy, a scalable alternative technology for producing quality crystalline nanowires at a remarkably high growth rate and throughput. Using size-controlled Au seed particles and organometallic precursors, Aerotaxy can produce nanowires with perfect crystallinity and controllable dimensions, and the method is suitable to meet industrial production requirements. In this report, we explain why Aerotaxy is an efficient method for fabricating semiconductor nanowires and explain the technical aspects of our custom-built Aerotaxy system. Investigations using SEM (scanning... (More)

Cost- and resource-efficient growth is necessary for many applications of semiconductor nanowires. We here present the design, operational details and theory behind Aerotaxy, a scalable alternative technology for producing quality crystalline nanowires at a remarkably high growth rate and throughput. Using size-controlled Au seed particles and organometallic precursors, Aerotaxy can produce nanowires with perfect crystallinity and controllable dimensions, and the method is suitable to meet industrial production requirements. In this report, we explain why Aerotaxy is an efficient method for fabricating semiconductor nanowires and explain the technical aspects of our custom-built Aerotaxy system. Investigations using SEM (scanning electron microscope), TEM (transmission electron microscope) and other characterization methods are used to support the claim that Aerotaxy is indeed a scalable method capable of producing nanowires with reproducible properties. We have investigated both binary and ternary III-V semiconductor material systems like GaAs and GaAsP. In addition, common aspects of Aerotaxy nanowires deduced from experimental observations are used to validate the Aerotaxy growth model, based on a computational flow dynamics (CFD) approach. We compare the experimental results with the model behaviour to better understand Aerotaxy growth.

(Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nanotechnology
volume
32
issue
2
pages
25605 - 25605
publisher
IOP Publishing
external identifiers
  • scopus:85094221374
  • pmid:32987376
ISSN
0957-4484
DOI
10.1088/1361-6528/abbc23
language
English
LU publication?
yes
id
6e3f0bb2-84db-4143-b2a4-24bec776a7b2
date added to LUP
2020-11-04 08:32:22
date last changed
2024-06-12 22:51:31
@article{6e3f0bb2-84db-4143-b2a4-24bec776a7b2,
  abstract     = {{<p>Cost- and resource-efficient growth is necessary for many applications of semiconductor nanowires. We here present the design, operational details and theory behind Aerotaxy, a scalable alternative technology for producing quality crystalline nanowires at a remarkably high growth rate and throughput. Using size-controlled Au seed particles and organometallic precursors, Aerotaxy can produce nanowires with perfect crystallinity and controllable dimensions, and the method is suitable to meet industrial production requirements. In this report, we explain why Aerotaxy is an efficient method for fabricating semiconductor nanowires and explain the technical aspects of our custom-built Aerotaxy system. Investigations using SEM (scanning electron microscope), TEM (transmission electron microscope) and other characterization methods are used to support the claim that Aerotaxy is indeed a scalable method capable of producing nanowires with reproducible properties. We have investigated both binary and ternary III-V semiconductor material systems like GaAs and GaAsP. In addition, common aspects of Aerotaxy nanowires deduced from experimental observations are used to validate the Aerotaxy growth model, based on a computational flow dynamics (CFD) approach. We compare the experimental results with the model behaviour to better understand Aerotaxy growth.</p>}},
  author       = {{Sivakumar, Sudhakar and Persson, Axel R. and Metaferia, Wondwosen and Heurlin, Magnus and Wallenberg, Reine and Samuelson, Lars and Deppert, Knut and Johansson, Jonas and Magnusson, Martin H.}},
  issn         = {{0957-4484}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{25605--25605}},
  publisher    = {{IOP Publishing}},
  series       = {{Nanotechnology}},
  title        = {{Aerotaxy : gas-phase epitaxy of quasi 1D nanostructures}},
  url          = {{http://dx.doi.org/10.1088/1361-6528/abbc23}},
  doi          = {{10.1088/1361-6528/abbc23}},
  volume       = {{32}},
  year         = {{2021}},
}