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Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

Roll, Guntrade LU ; Mo, Jiongjiong LU ; Lind, Erik LU ; Johansson, Sofia LU and Wernersson, Lars-Erik LU (2015) In Applied Physics Letters 106(20).
Abstract
The performance of InGaAs metal oxide semiconductor field effect transistors with Al2O3 or HfO2 as gate oxide is evaluated and compared. The Al2O3 transistors show the lowest subthreshold slope and mid gap D-it, however, the HfO2 transistors reach a higher maximum transconductance (g(max)) due to the higher oxide capacitance. Both high-kappa dielectrics show a g(m)-frequency dispersion due to tunneling into border traps with a negligible activation energy as determined from temperature dependent measurements. The total amount of trapped charge at border traps is lower in the HfO2 devices. Scaling the HfO2 thickness further reduces the g(m)-frequency dispersion, possibly due to detrapping to the gate electrode. (C) 2015 AIP Publishing LLC.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
106
issue
20
publisher
American Institute of Physics
external identifiers
  • wos:000355009400047
  • scopus:84929997144
ISSN
0003-6951
DOI
10.1063/1.4921483
language
English
LU publication?
yes
id
f2bdc4de-7de5-4d00-8340-9306a0aba4e7 (old id 7411688)
date added to LUP
2015-06-26 14:46:56
date last changed
2017-10-01 03:21:42
@article{f2bdc4de-7de5-4d00-8340-9306a0aba4e7,
  abstract     = {The performance of InGaAs metal oxide semiconductor field effect transistors with Al2O3 or HfO2 as gate oxide is evaluated and compared. The Al2O3 transistors show the lowest subthreshold slope and mid gap D-it, however, the HfO2 transistors reach a higher maximum transconductance (g(max)) due to the higher oxide capacitance. Both high-kappa dielectrics show a g(m)-frequency dispersion due to tunneling into border traps with a negligible activation energy as determined from temperature dependent measurements. The total amount of trapped charge at border traps is lower in the HfO2 devices. Scaling the HfO2 thickness further reduces the g(m)-frequency dispersion, possibly due to detrapping to the gate electrode. (C) 2015 AIP Publishing LLC.},
  articleno    = {203503},
  author       = {Roll, Guntrade and Mo, Jiongjiong and Lind, Erik and Johansson, Sofia and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  language     = {eng},
  number       = {20},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric},
  url          = {http://dx.doi.org/10.1063/1.4921483},
  volume       = {106},
  year         = {2015},
}