Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures
(2024) In Nanotechnology 35(25).- Abstract
We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries... (More)
We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped.
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- author
- Gustafsson, Anders
LU
; Persson, Axel R. ; Persson, Per O.Å. ; Darakchieva, Vanya LU ; Bi, Zhaoxia LU
and Samuelson, Lars LU
- organization
- publishing date
- 2024-06-17
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- cathodoluminescence, III-nitrides, platelets, stacking mismatch boundaries, μ-LED
- in
- Nanotechnology
- volume
- 35
- issue
- 25
- article number
- 255703
- publisher
- IOP Publishing
- external identifiers
-
- scopus:85189854230
- pmid:38484394
- ISSN
- 0957-4484
- DOI
- 10.1088/1361-6528/ad33e9
- language
- English
- LU publication?
- yes
- id
- 777b7ae7-9b3a-458c-ac59-e6aa37e37379
- date added to LUP
- 2024-04-23 10:22:10
- date last changed
- 2024-06-18 15:17:47
@article{777b7ae7-9b3a-458c-ac59-e6aa37e37379, abstract = {{<p>We have investigated the optical properties of heterostructured InGaN platelets aiming at red emission, intended for use as nano-scaled light-emitting diodes. The focus is on the presence of non-radiative emission in the form of dark line defects. We have performed the study using hyperspectral cathodoluminescence imaging. The platelets were grown on a template consisting of InGaN pyramids, flattened by chemical mechanical polishing. These templates are defect free, whereas the dark line defects are introduced in the lower barrier and tend to propagate through all the subsequent layers, as revealed by the imaging of different layers in the structure. We conclude that the dark line defects are caused by stacking mismatch boundaries introduced by multiple seeding and step bunching at the edges of the as-polished, dome shaped templates. To avoid these defects, we suggest that the starting material must be flat rather than dome shaped.</p>}}, author = {{Gustafsson, Anders and Persson, Axel R. and Persson, Per O.Å. and Darakchieva, Vanya and Bi, Zhaoxia and Samuelson, Lars}}, issn = {{0957-4484}}, keywords = {{cathodoluminescence; III-nitrides; platelets; stacking mismatch boundaries; μ-LED}}, language = {{eng}}, month = {{06}}, number = {{25}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Cathodoluminescence investigations of dark-line defects in platelet-based InGaN nano-LED structures}}, url = {{http://dx.doi.org/10.1088/1361-6528/ad33e9}}, doi = {{10.1088/1361-6528/ad33e9}}, volume = {{35}}, year = {{2024}}, }