Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(2002) In Journal of Vacuum Science and Technology B 20(2). p.580-589- Abstract
- A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in... (More)
- A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in order to study the influence of the overgrowth process on the properties of the tungsten. We also evaluated the current-voltage characteristics for macroscopic contacts, which revealed a clear dependence on processing parameters. Optimized processing conditions could thus be established under which limited contact degradation occurred during overgrowth. Finally, we used the overgrowth technique to perform a detailed investigation of the electrical and optical properties of floating-potential embedded nano-Schottky contacts by space-charge spectroscopy. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/339874
- author
- Wernersson, Lars-Erik LU ; Georgsson, K ; Gustafsson, Anders LU ; Löfgren, Anneli LU ; Montelius, Lars LU ; Nilsson, N ; Pettersson, H ; Seifert, Werner LU ; Samuelson, Lars LU and Malm, Jan-Olle LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Vacuum Science and Technology B
- volume
- 20
- issue
- 2
- pages
- 580 - 589
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000175168800014
- scopus:0036506062
- ISSN
- 1520-8567
- DOI
- 10.1116/1.1454128
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 7e5449af-0fb1-4f48-b2ef-c001829f5621 (old id 339874)
- date added to LUP
- 2016-04-01 11:44:48
- date last changed
- 2023-09-01 05:39:55
@article{7e5449af-0fb1-4f48-b2ef-c001829f5621, abstract = {{A processing scheme for the fabrication of embedded W-GaAs contacts has been established and the resulting contact characteristics have been evaluated. The main advantage of these contacts is that they are stable during high-temperature epitaxial overgrowth. The fabrication scheme is based on a liftoff process with electron beam evaporation of tungsten and subsequent epitaxial overgrowth using metalorganic vapor phase epitaxy. Various methods were used to characterize the buried contacts. First, the structural properties of GaAs surrounding embedded W features, with widths down to 50 nm, were characterized by high-resolution transmission electron microscopy. Measurements of the conductivity in individual, buried wires were performed in order to study the influence of the overgrowth process on the properties of the tungsten. We also evaluated the current-voltage characteristics for macroscopic contacts, which revealed a clear dependence on processing parameters. Optimized processing conditions could thus be established under which limited contact degradation occurred during overgrowth. Finally, we used the overgrowth technique to perform a detailed investigation of the electrical and optical properties of floating-potential embedded nano-Schottky contacts by space-charge spectroscopy.}}, author = {{Wernersson, Lars-Erik and Georgsson, K and Gustafsson, Anders and Löfgren, Anneli and Montelius, Lars and Nilsson, N and Pettersson, H and Seifert, Werner and Samuelson, Lars and Malm, Jan-Olle}}, issn = {{1520-8567}}, language = {{eng}}, number = {{2}}, pages = {{580--589}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Journal of Vacuum Science and Technology B}}, title = {{Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm}}, url = {{http://dx.doi.org/10.1116/1.1454128}}, doi = {{10.1116/1.1454128}}, volume = {{20}}, year = {{2002}}, }