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Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere

Sundarapandian, Balasubramanian ; Tran, Dat Q. ; Kirste, Lutz ; Straňák, Patrik ; Graff, Andreas ; Prescher, Mario ; Nair, Akash ; Raghuwanshi, Mohit ; Darakchieva, Vanya LU and Paskov, Plamen P. , et al. (2024) In Applied Physics Letters 124(18).
Abstract

Wurtzite-type aluminum nitride (AlN) thin films exhibiting high thermal conductivity, large grain size, and low surface roughness are desired for both bulk acoustic wave and surface acoustic wave resonators. In this work, we use ammonia (NH3) assisted reactive sputter deposition of AlN to significantly improve these properties. The study shows a systematic change in the structural, thermal, and morphological properties of AlN grown in nitrogen (N2) and N2 + NH3 atmosphere. The study demonstrates that NH3 assisted AlN sputtering facilitates 2D growth. In addition, the study presents a growth model relating the 2D growth to improve the mobility of aluminum (Al) and nitrogen (N)... (More)

Wurtzite-type aluminum nitride (AlN) thin films exhibiting high thermal conductivity, large grain size, and low surface roughness are desired for both bulk acoustic wave and surface acoustic wave resonators. In this work, we use ammonia (NH3) assisted reactive sputter deposition of AlN to significantly improve these properties. The study shows a systematic change in the structural, thermal, and morphological properties of AlN grown in nitrogen (N2) and N2 + NH3 atmosphere. The study demonstrates that NH3 assisted AlN sputtering facilitates 2D growth. In addition, the study presents a growth model relating the 2D growth to improve the mobility of aluminum (Al) and nitrogen (N) ad-atoms in NH3 atmosphere. Consequently, the thermal conductivity and roughness improve by ≈ 76%, and ≈ 35%, while the grain size increases by ≈ 78%.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
124
issue
18
article number
182101
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:85192238024
ISSN
0003-6951
DOI
10.1063/5.0202161
language
English
LU publication?
yes
id
83d00c2d-2262-4cf4-b769-cdbc65c5ea69
date added to LUP
2024-05-21 13:59:03
date last changed
2024-05-21 14:55:59
@article{83d00c2d-2262-4cf4-b769-cdbc65c5ea69,
  abstract     = {{<p>Wurtzite-type aluminum nitride (AlN) thin films exhibiting high thermal conductivity, large grain size, and low surface roughness are desired for both bulk acoustic wave and surface acoustic wave resonators. In this work, we use ammonia (NH<sub>3</sub>) assisted reactive sputter deposition of AlN to significantly improve these properties. The study shows a systematic change in the structural, thermal, and morphological properties of AlN grown in nitrogen (N<sub>2</sub>) and N<sub>2</sub> + NH<sub>3</sub> atmosphere. The study demonstrates that NH<sub>3</sub> assisted AlN sputtering facilitates 2D growth. In addition, the study presents a growth model relating the 2D growth to improve the mobility of aluminum (Al) and nitrogen (N) ad-atoms in NH<sub>3</sub> atmosphere. Consequently, the thermal conductivity and roughness improve by ≈ 76%, and ≈ 35%, while the grain size increases by ≈ 78%.</p>}},
  author       = {{Sundarapandian, Balasubramanian and Tran, Dat Q. and Kirste, Lutz and Straňák, Patrik and Graff, Andreas and Prescher, Mario and Nair, Akash and Raghuwanshi, Mohit and Darakchieva, Vanya and Paskov, Plamen P. and Ambacher, Oliver}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  month        = {{04}},
  number       = {{18}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Comparison of aluminum nitride thin films prepared by magnetron sputter epitaxy in nitrogen and ammonia atmosphere}},
  url          = {{http://dx.doi.org/10.1063/5.0202161}},
  doi          = {{10.1063/5.0202161}},
  volume       = {{124}},
  year         = {{2024}},
}