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Doping evaluation of InP nanowires for tandem junction solar cells

Lindelöw, Fredrik LU ; Heurlin, Magnus LU ; Otnes, Gaute LU ; Dagyte, Vilgaile LU ; Lindgren, David LU ; Hultin, Olof LU ; Storm, Kristian LU ; Samuelson, Lars LU and Borgström, Magnus LU (2016) In Nanotechnology 27(6).
Abstract
In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for... (More)
In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 10(16) cm(-3). By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 10(19) cm(-3), where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Hall effect, nanowires, resistivity, doping, carrier concentration, InP
in
Nanotechnology
volume
27
issue
6
publisher
IOP Publishing
external identifiers
  • wos:000368897100025
  • scopus:84954570009
ISSN
0957-4484
DOI
10.1088/0957-4484/27/6/065706
language
English
LU publication?
yes
id
7ca3197d-03ae-4df0-a564-a2ebf3103516 (old id 8728564)
date added to LUP
2016-02-26 11:19:23
date last changed
2017-05-28 03:02:36
@article{7ca3197d-03ae-4df0-a564-a2ebf3103516,
  abstract     = {In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 10(16) cm(-3). By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 10(19) cm(-3), where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.},
  articleno    = {065706},
  author       = {Lindelöw, Fredrik and Heurlin, Magnus and Otnes, Gaute and Dagyte, Vilgaile and Lindgren, David and Hultin, Olof and Storm, Kristian and Samuelson, Lars and Borgström, Magnus},
  issn         = {0957-4484},
  keyword      = {Hall effect,nanowires,resistivity,doping,carrier concentration,InP},
  language     = {eng},
  number       = {6},
  publisher    = {IOP Publishing},
  series       = {Nanotechnology},
  title        = {Doping evaluation of InP nanowires for tandem junction solar cells},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/6/065706},
  volume       = {27},
  year         = {2016},
}