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Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires

Ganjipour, Bahram LU ; Ek, Martin LU orcid ; Borg, Mattias LU orcid ; Dick Thelander, Kimberly LU ; Pistol, Mats-Erik LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU (2012) In Applied Physics Letters 101(10).
Abstract
We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5-7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb... (More)
We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5-7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (<3 nm) InAs shell improves p-type GaSb nanowire transistor characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749283] (Less)
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
101
issue
10
article number
103501
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000309072800078
  • scopus:84866022817
ISSN
0003-6951
DOI
10.1063/1.4749283
language
English
LU publication?
yes
id
87acbe6c-38c8-49cf-a165-27962e223043 (old id 3191226)
date added to LUP
2016-04-01 10:40:39
date last changed
2025-10-14 09:31:32
@article{87acbe6c-38c8-49cf-a165-27962e223043,
  abstract     = {{We report transport studies of GaSb/InAs core/shell nanowires. It is shown that with increasing InAs shell thickness, it is possible to tune the carrier concentrations and transport in the structures from p-type (core-dominated) to n-type (shell dominated). For nanowires with an intermediate shell thickness (5-7 nm), we show that the transport is ambipolar, such that an applied top-gate potential can provide further control of carrier type and transport path. In this range, the nature of the GaSb-InAs junction also changes from broken gap (semimetal) to staggered (narrow bandgap) with a small decrease in shell thickness. From a device point of view, we demonstrate that the presence of a thin (&lt;3 nm) InAs shell improves p-type GaSb nanowire transistor characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4749283]}},
  author       = {{Ganjipour, Bahram and Ek, Martin and Borg, Mattias and Dick Thelander, Kimberly and Pistol, Mats-Erik and Wernersson, Lars-Erik and Thelander, Claes}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{10}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires}},
  url          = {{http://dx.doi.org/10.1063/1.4749283}},
  doi          = {{10.1063/1.4749283}},
  volume       = {{101}},
  year         = {{2012}},
}