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RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors

Wu, Jun LU ; Jansson, Kristofer LU ; Shiri Babadi, Aein LU ; Berg, Martin LU ; Lind, Erik LU orcid and Wernersson, Lars-Erik LU (2016) In IEEE Transactions on Electron Devices 63(2). p.584-589
Abstract
This paper presents RF as well as low-frequency capacitance–voltage (C–V) characterization of vertical wrap-gated InAs/high-κ nanowire MOS capacitors. A full equivalent circuit model for traps is used to fit the low-frequency C–V characteristics, from which the interface trap density (Dit) and border trap density (Nbt) are evaluated separately. The results show comparable Nbt but far lower Dit (<10E12 eV−1cm−2 near the conduction band edge) for a nanowire MOS gate-stack compared with planar references. In the RF domain, the influence of nanowire series resistances become significant, and by introducing

a distributed RC-model, the nanowire resistivity (ρnw) is evaluated from the capacitance data as a function of the gate bias.... (More)
This paper presents RF as well as low-frequency capacitance–voltage (C–V) characterization of vertical wrap-gated InAs/high-κ nanowire MOS capacitors. A full equivalent circuit model for traps is used to fit the low-frequency C–V characteristics, from which the interface trap density (Dit) and border trap density (Nbt) are evaluated separately. The results show comparable Nbt but far lower Dit (<10E12 eV−1cm−2 near the conduction band edge) for a nanowire MOS gate-stack compared with planar references. In the RF domain, the influence of nanowire series resistances become significant, and by introducing

a distributed RC-model, the nanowire resistivity (ρnw) is evaluated from the capacitance data as a function of the gate bias. An ON/OFF ρnw ratio of 10E−2 is obtained for the best device. Using the measured data, the quality factor is finally evaluated both for fabricated and ideal capacitors. The results agree well with simulated data. (Less)
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
trap density., RF, resistivity, quality factor, nanowire, InAs, high-κ, Capacitance–voltage (C–V)
in
IEEE Transactions on Electron Devices
volume
63
issue
2
pages
584 - 589
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84958107906
  • wos:000369304700009
ISSN
0018-9383
DOI
10.1109/TED.2015.2506040
project
EIT_WWW Wireless with Wires
language
English
LU publication?
yes
id
09ef5ecc-6d61-4cea-9c9b-697032aea70d (old id 8864506)
date added to LUP
2016-04-01 13:51:10
date last changed
2024-07-03 20:19:32
@article{09ef5ecc-6d61-4cea-9c9b-697032aea70d,
  abstract     = {{This paper presents RF as well as low-frequency capacitance–voltage (C–V) characterization of vertical wrap-gated InAs/high-κ nanowire MOS capacitors. A full equivalent circuit model for traps is used to fit the low-frequency C–V characteristics, from which the interface trap density (Dit) and border trap density (Nbt) are evaluated separately. The results show comparable Nbt but far lower Dit (&lt;10E12 eV−1cm−2 near the conduction band edge) for a nanowire MOS gate-stack compared with planar references. In the RF domain, the influence of nanowire series resistances become significant, and by introducing<br/><br>
a distributed RC-model, the nanowire resistivity (ρnw) is evaluated from the capacitance data as a function of the gate bias. An ON/OFF ρnw ratio of 10E−2 is obtained for the best device. Using the measured data, the quality factor is finally evaluated both for fabricated and ideal capacitors. The results agree well with simulated data.}},
  author       = {{Wu, Jun and Jansson, Kristofer and Shiri Babadi, Aein and Berg, Martin and Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{0018-9383}},
  keywords     = {{trap density.; RF; resistivity; quality factor; nanowire; InAs; high-κ; Capacitance–voltage (C–V)}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{584--589}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors}},
  url          = {{http://dx.doi.org/10.1109/TED.2015.2506040}},
  doi          = {{10.1109/TED.2015.2506040}},
  volume       = {{63}},
  year         = {{2016}},
}