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RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors

Wu, Jun LU ; Jansson, Kristofer LU ; Shiri Babadi, Aein LU ; Berg, Martin LU ; Lind, Erik LU and Wernersson, Lars-Erik LU (2016) In IEEE Transactions on Electron Devices 63(2). p.584-589
Abstract
This paper presents RF as well as low-frequency capacitance–voltage (C–V) characterization of vertical wrap-gated InAs/high-κ nanowire MOS capacitors. A full equivalent circuit model for traps is used to fit the low-frequency C–V characteristics, from which the interface trap density (Dit) and border trap density (Nbt) are evaluated separately. The results show comparable Nbt but far lower Dit (<10E12 eV−1cm−2 near the conduction band edge) for a nanowire MOS gate-stack compared with planar references. In the RF domain, the influence of nanowire series resistances become significant, and by introducing

a distributed RC-model, the nanowire resistivity (ρnw) is evaluated from the capacitance data as a function of the gate bias.... (More)
This paper presents RF as well as low-frequency capacitance–voltage (C–V) characterization of vertical wrap-gated InAs/high-κ nanowire MOS capacitors. A full equivalent circuit model for traps is used to fit the low-frequency C–V characteristics, from which the interface trap density (Dit) and border trap density (Nbt) are evaluated separately. The results show comparable Nbt but far lower Dit (<10E12 eV−1cm−2 near the conduction band edge) for a nanowire MOS gate-stack compared with planar references. In the RF domain, the influence of nanowire series resistances become significant, and by introducing

a distributed RC-model, the nanowire resistivity (ρnw) is evaluated from the capacitance data as a function of the gate bias. An ON/OFF ρnw ratio of 10E−2 is obtained for the best device. Using the measured data, the quality factor is finally evaluated both for fabricated and ideal capacitors. The results agree well with simulated data. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
trap density., RF, resistivity, quality factor, nanowire, InAs, high-κ, Capacitance–voltage (C–V)
in
IEEE Transactions on Electron Devices
volume
63
issue
2
pages
584 - 589
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:84958107906
  • wos:000369304700009
ISSN
0018-9383
DOI
10.1109/TED.2015.2506040
project
EIT_WWW Wireless with Wires
language
English
LU publication?
yes
id
09ef5ecc-6d61-4cea-9c9b-697032aea70d (old id 8864506)
date added to LUP
2016-03-23 14:57:14
date last changed
2017-08-13 03:59:16
@article{09ef5ecc-6d61-4cea-9c9b-697032aea70d,
  abstract     = {This paper presents RF as well as low-frequency capacitance–voltage (C–V) characterization of vertical wrap-gated InAs/high-κ nanowire MOS capacitors. A full equivalent circuit model for traps is used to fit the low-frequency C–V characteristics, from which the interface trap density (Dit) and border trap density (Nbt) are evaluated separately. The results show comparable Nbt but far lower Dit (&lt;10E12 eV−1cm−2 near the conduction band edge) for a nanowire MOS gate-stack compared with planar references. In the RF domain, the influence of nanowire series resistances become significant, and by introducing<br/><br>
a distributed RC-model, the nanowire resistivity (ρnw) is evaluated from the capacitance data as a function of the gate bias. An ON/OFF ρnw ratio of 10E−2 is obtained for the best device. Using the measured data, the quality factor is finally evaluated both for fabricated and ideal capacitors. The results agree well with simulated data.},
  author       = {Wu, Jun and Jansson, Kristofer and Shiri Babadi, Aein and Berg, Martin and Lind, Erik and Wernersson, Lars-Erik},
  issn         = {0018-9383},
  keyword      = {trap density.,RF,resistivity,quality factor,nanowire,InAs,high-κ,Capacitance–voltage (C–V)},
  language     = {eng},
  number       = {2},
  pages        = {584--589},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Electron Devices},
  title        = {RF Characterization of Vertical Wrap-Gated InAs/High-κ Nanowire Capacitors},
  url          = {http://dx.doi.org/10.1109/TED.2015.2506040},
  volume       = {63},
  year         = {2016},
}