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Temperature-dependent carrier dynamics in red InGaN quantum wells revealed by cathodoluminescence

Usman, Hira ; Bi, Zhaoxia LU orcid ; Gustafsson, Anders LU orcid and Samuelson, Lars LU (2026) In Applied Physics Letters 128(19).
Abstract

In this work, we investigate carrier recombination dynamics and defect-related emission behavior in high-indium content InGaN platelets containing a single quantum well (QW) and a transition layer (TL) using temperature-dependent monochromatic cathodoluminescence (CL) imaging and time-resolved CL (TRCL). At low temperature, monochromatic CL imaging reveals expanded apparent emitting area of both layers and reduced effective width of dark lines associated with stacking mismatch boundaries, indicating suppressed non-radiative recombination and enhanced alloy-induced carrier localization. The TRCL data reveal distinct temperature-dependent carrier recombination mechanisms governing both layers. At low temperature, carrier localization... (More)

In this work, we investigate carrier recombination dynamics and defect-related emission behavior in high-indium content InGaN platelets containing a single quantum well (QW) and a transition layer (TL) using temperature-dependent monochromatic cathodoluminescence (CL) imaging and time-resolved CL (TRCL). At low temperature, monochromatic CL imaging reveals expanded apparent emitting area of both layers and reduced effective width of dark lines associated with stacking mismatch boundaries, indicating suppressed non-radiative recombination and enhanced alloy-induced carrier localization. The TRCL data reveal distinct temperature-dependent carrier recombination mechanisms governing both layers. At low temperature, carrier localization supports longer lifetimes (τ) in the QW of about 1.4 ns and the TL displays multiple recombination channels due to its structural complexity. At room temperature, thermal carrier diffusion enables efficient capture by defects, resulting in pronounced τ quenching to about 0.22 and 0.07 ns in the two layers, respectively.

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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
128
issue
19
article number
192109
publisher
American Institute of Physics (AIP)
external identifiers
  • scopus:105038910504
ISSN
0003-6951
DOI
10.1063/5.0325290
language
English
LU publication?
yes
id
94324701-65a4-462b-9a21-566e76974f04
date added to LUP
2026-08-19 11:17:32
date last changed
2026-08-19 11:17:53
@article{94324701-65a4-462b-9a21-566e76974f04,
  abstract     = {{<p>In this work, we investigate carrier recombination dynamics and defect-related emission behavior in high-indium content InGaN platelets containing a single quantum well (QW) and a transition layer (TL) using temperature-dependent monochromatic cathodoluminescence (CL) imaging and time-resolved CL (TRCL). At low temperature, monochromatic CL imaging reveals expanded apparent emitting area of both layers and reduced effective width of dark lines associated with stacking mismatch boundaries, indicating suppressed non-radiative recombination and enhanced alloy-induced carrier localization. The TRCL data reveal distinct temperature-dependent carrier recombination mechanisms governing both layers. At low temperature, carrier localization supports longer lifetimes (τ) in the QW of about 1.4 ns and the TL displays multiple recombination channels due to its structural complexity. At room temperature, thermal carrier diffusion enables efficient capture by defects, resulting in pronounced τ quenching to about 0.22 and 0.07 ns in the two layers, respectively.</p>}},
  author       = {{Usman, Hira and Bi, Zhaoxia and Gustafsson, Anders and Samuelson, Lars}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{19}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Temperature-dependent carrier dynamics in red InGaN quantum wells revealed by cathodoluminescence}},
  url          = {{http://dx.doi.org/10.1063/5.0325290}},
  doi          = {{10.1063/5.0325290}},
  volume       = {{128}},
  year         = {{2026}},
}