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Doping profile of InP nanowires directly imaged by photoemission electron microscopy

Hjort, Martin LU orcid ; Wallentin, Jesper LU ; Timm, Rainer LU orcid ; Zakharov, Alexei LU ; Andersen, Jesper N LU ; Samuelson, Lars LU ; Borgström, Magnus LU and Mikkelsen, Anders LU (2011) In Applied Physics Letters 99(23).
Abstract
InP nanowires (NWs) with differently doped segments were studied with nanoscale resolution using synchrotron based photoemission electron microscopy. We clearly resolved axially stacked n-type and undoped segments of the NWs without the need of additional processing or contacting. The lengths and relative doping levels of different NW segments as well as space charge regions were determined indicating memory effects of sulfur during growth. The surface chemistry of the nanowires was monitored simultaneously, showing that in the present case, the doping contrast was independent of the presence or absence of a native oxide. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662933]
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
99
issue
23
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000298006100075
  • scopus:83455228538
ISSN
0003-6951
DOI
10.1063/1.3662933
language
English
LU publication?
yes
id
97e10a76-3800-4c0a-82e8-d9dbaac9798a (old id 2378596)
date added to LUP
2016-04-01 11:06:03
date last changed
2023-08-31 18:43:39
@article{97e10a76-3800-4c0a-82e8-d9dbaac9798a,
  abstract     = {{InP nanowires (NWs) with differently doped segments were studied with nanoscale resolution using synchrotron based photoemission electron microscopy. We clearly resolved axially stacked n-type and undoped segments of the NWs without the need of additional processing or contacting. The lengths and relative doping levels of different NW segments as well as space charge regions were determined indicating memory effects of sulfur during growth. The surface chemistry of the nanowires was monitored simultaneously, showing that in the present case, the doping contrast was independent of the presence or absence of a native oxide. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662933]}},
  author       = {{Hjort, Martin and Wallentin, Jesper and Timm, Rainer and Zakharov, Alexei and Andersen, Jesper N and Samuelson, Lars and Borgström, Magnus and Mikkelsen, Anders}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{23}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Doping profile of InP nanowires directly imaged by photoemission electron microscopy}},
  url          = {{http://dx.doi.org/10.1063/1.3662933}},
  doi          = {{10.1063/1.3662933}},
  volume       = {{99}},
  year         = {{2011}},
}