Doping profile of InP nanowires directly imaged by photoemission electron microscopy
(2011) In Applied Physics Letters 99(23).- Abstract
- InP nanowires (NWs) with differently doped segments were studied with nanoscale resolution using synchrotron based photoemission electron microscopy. We clearly resolved axially stacked n-type and undoped segments of the NWs without the need of additional processing or contacting. The lengths and relative doping levels of different NW segments as well as space charge regions were determined indicating memory effects of sulfur during growth. The surface chemistry of the nanowires was monitored simultaneously, showing that in the present case, the doping contrast was independent of the presence or absence of a native oxide. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662933]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2378596
- author
- Hjort, Martin LU ; Wallentin, Jesper LU ; Timm, Rainer LU ; Zakharov, Alexei LU ; Andersen, Jesper N LU ; Samuelson, Lars LU ; Borgström, Magnus LU and Mikkelsen, Anders LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 99
- issue
- 23
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000298006100075
- scopus:83455228538
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3662933
- language
- English
- LU publication?
- yes
- id
- 97e10a76-3800-4c0a-82e8-d9dbaac9798a (old id 2378596)
- date added to LUP
- 2016-04-01 11:06:03
- date last changed
- 2023-08-31 18:43:39
@article{97e10a76-3800-4c0a-82e8-d9dbaac9798a, abstract = {{InP nanowires (NWs) with differently doped segments were studied with nanoscale resolution using synchrotron based photoemission electron microscopy. We clearly resolved axially stacked n-type and undoped segments of the NWs without the need of additional processing or contacting. The lengths and relative doping levels of different NW segments as well as space charge regions were determined indicating memory effects of sulfur during growth. The surface chemistry of the nanowires was monitored simultaneously, showing that in the present case, the doping contrast was independent of the presence or absence of a native oxide. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662933]}}, author = {{Hjort, Martin and Wallentin, Jesper and Timm, Rainer and Zakharov, Alexei and Andersen, Jesper N and Samuelson, Lars and Borgström, Magnus and Mikkelsen, Anders}}, issn = {{0003-6951}}, language = {{eng}}, number = {{23}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Doping profile of InP nanowires directly imaged by photoemission electron microscopy}}, url = {{http://dx.doi.org/10.1063/1.3662933}}, doi = {{10.1063/1.3662933}}, volume = {{99}}, year = {{2011}}, }