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One dimensional heterostructures and resonant tunneling in III-V nanowires

Thelander, Claes LU ; Ohlsson, Jonas LU ; Björk, Mikael LU ; Mårtensson, Thomas LU ; Persson, Ann LU ; Deppert, Knut LU orcid ; Larsson, Marcus LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2003) IEEE International Symposium on Compound Semiconductors p.151-152
Abstract
We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
III-V nanowires, GaAs, one dimensional heterostructures, epitaxially nucleated semiconductor nanowires growth, InP, gold particles, InP heterostructure barriers, InAs, resonant tunneling diodes, single electron transistors
host publication
2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675)
pages
151 - 152
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
conference name
IEEE International Symposium on Compound Semiconductors
conference location
San Diego, CA, United States
conference dates
2003-08-25 - 2003-08-27
external identifiers
  • scopus:81155159367
ISBN
0-7803-7820-2
DOI
10.1109/ISCS.2003.1239951
language
English
LU publication?
yes
id
9f8778eb-c819-489e-b1da-fcdcf665b052 (old id 613320)
date added to LUP
2016-04-04 12:01:35
date last changed
2025-10-14 09:38:51
@inproceedings{9f8778eb-c819-489e-b1da-fcdcf665b052,
  abstract     = {{We use a bottom-up approach to grow epitaxially nucleated semiconductor nanowires from gold particles. Heterostructure barriers of InP are introduced inside InAs nanowires to form resonant tunneling diodes and single-electron transistors}},
  author       = {{Thelander, Claes and Ohlsson, Jonas and Björk, Mikael and Mårtensson, Thomas and Persson, Ann and Deppert, Knut and Larsson, Marcus and Wallenberg, Reine and Samuelson, Lars}},
  booktitle    = {{2003 International Symposium on Compound Semiconductors (Cat. No.03TH8675)}},
  isbn         = {{0-7803-7820-2}},
  keywords     = {{III-V nanowires; GaAs; one dimensional heterostructures; epitaxially nucleated semiconductor nanowires growth; InP; gold particles; InP heterostructure barriers; InAs; resonant tunneling diodes; single electron transistors}},
  language     = {{eng}},
  pages        = {{151--152}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  title        = {{One dimensional heterostructures and resonant tunneling in III-V nanowires}},
  url          = {{http://dx.doi.org/10.1109/ISCS.2003.1239951}},
  doi          = {{10.1109/ISCS.2003.1239951}},
  year         = {{2003}},
}