Novel nanoelectronic triodes and logic devices with TBJs
(2004) In IEEE Electron Device Letters 25(4). p.164-166- Abstract
- In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/283646
- author
- Xu, Hongqi LU ; Shorubalko, Ivan LU ; Wallin, Daniel LU ; Maximov, Ivan LU ; Omling, Pär LU ; Samuelson, Lars LU and Seifert, Werner LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- ballistic devices, logic gates, nanoelectronics, ballistic junctions (TBJs), three-terminal, diodes, triodes
- in
- IEEE Electron Device Letters
- volume
- 25
- issue
- 4
- pages
- 164 - 166
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000220478000002
- scopus:1942424163
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2004.824841
- language
- English
- LU publication?
- yes
- id
- b0c66aa8-6866-48f8-94f3-adcc452db4cc (old id 283646)
- date added to LUP
- 2016-04-01 15:54:46
- date last changed
- 2022-04-15 00:50:19
@article{b0c66aa8-6866-48f8-94f3-adcc452db4cc, abstract = {{In this letter, we demonstrate the realization of novel diodes, triodes, and logic gates with three-terminal ballistic junctions (TBJs) made from a semiconductor heterostructure. The approach exploits the ballistic nature of electron transport, which has emerged in the nanostructures. Importantly, we show that TBJs function as logic AND gates and can be used to construct other compound logic gates, such as NAND gates with voltage gain, when combined with a point contact (an inverter). The demonstrated devices show favorable characteristics such as low turn-on voltage in rectification and room-temperature operation.}}, author = {{Xu, Hongqi and Shorubalko, Ivan and Wallin, Daniel and Maximov, Ivan and Omling, Pär and Samuelson, Lars and Seifert, Werner}}, issn = {{0741-3106}}, keywords = {{ballistic devices; logic gates; nanoelectronics; ballistic junctions (TBJs); three-terminal; diodes; triodes}}, language = {{eng}}, number = {{4}}, pages = {{164--166}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Novel nanoelectronic triodes and logic devices with TBJs}}, url = {{http://dx.doi.org/10.1109/LED.2004.824841}}, doi = {{10.1109/LED.2004.824841}}, volume = {{25}}, year = {{2004}}, }