Heterointerfaces in III-V semiconductor nanowhiskers
(2002) 14th Indium Phosphide and Related Materials Conference p.281-283- Abstract
- We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/611176
- author
- Persson, Ann LU ; Ohlsson, Jonas LU ; Björk, Mikael LU ; Thelander, Claes LU ; Magnusson, Martin LU ; Deppert, Knut LU ; Sass, T. ; Wallenberg, Reine LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Semiconductor nanowhiskers
- host publication
- Conference Proceedings - International Conference on Indium Phosphide and Related Materials
- pages
- 281 - 283
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 14th Indium Phosphide and Related Materials Conference
- conference location
- Stockholm, Sweden
- conference dates
- 2002-05-12 - 2002-05-16
- external identifiers
-
- other:CODEN: CPRMEG
- scopus:0036053101
- ISSN
- 1092-8669
- DOI
- 10.1109/ICIPRM.2002.1014367
- language
- English
- LU publication?
- yes
- id
- b5532fc1-05f2-4ac6-ab0d-9483348cdb2d (old id 611176)
- date added to LUP
- 2016-04-01 16:47:21
- date last changed
- 2022-02-13 00:33:42
@inproceedings{b5532fc1-05f2-4ac6-ab0d-9483348cdb2d, abstract = {{We have investigated heterostructures formed within Vapor-Liquid-Solid grown III-V nanowhiskers. The growth conditions that are typical for chemical beam epitaxy facilitate the creation of atomically abrupt interfaces. In this paper we investigate the properties of heterostructure interfaces including switching of either the column-V material (As, P) or the column-III material (In, Ga).}}, author = {{Persson, Ann and Ohlsson, Jonas and Björk, Mikael and Thelander, Claes and Magnusson, Martin and Deppert, Knut and Sass, T. and Wallenberg, Reine and Samuelson, Lars}}, booktitle = {{Conference Proceedings - International Conference on Indium Phosphide and Related Materials}}, issn = {{1092-8669}}, keywords = {{Semiconductor nanowhiskers}}, language = {{eng}}, pages = {{281--283}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Heterointerfaces in III-V semiconductor nanowhiskers}}, url = {{http://dx.doi.org/10.1109/ICIPRM.2002.1014367}}, doi = {{10.1109/ICIPRM.2002.1014367}}, year = {{2002}}, }