Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
Wu, Jun LU ; Lind, Erik LU ; Timm, Rainer LU
; Hjort, Martin
LU
; Mikkelsen, Anders
LU
and Wernersson, Lars-Erik
LU
(2012)
In Applied Physics Letters
100(13).
p.3-132905
- Abstract
- The influence of InAs orientations and high-k oxide deposition conditions on the electrical and
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results
suggest that the interface traps around the conduction band edge are correlated to the As-oxide
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide
determines the border trap density, hence the capacitance frequency dispersion. The comparison of
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B
substrates... (More) - The influence of InAs orientations and high-k oxide deposition conditions on the electrical and
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results
suggest that the interface traps around the conduction band edge are correlated to the As-oxide
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide
determines the border trap density, hence the capacitance frequency dispersion. The comparison of
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B
substrates followed by an annealing procedure at 400 oC. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2435560
- author
- Wu, Jun
LU
; Lind, Erik
LU
; Timm, Rainer
LU
; Hjort, Martin
LU
; Mikkelsen, Anders
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Interface, InAs, High k, MOS capacitors
- in
- Applied Physics Letters
- volume
- 100
- issue
- 13
- pages
- 3 - 132905
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000302230800053
- scopus:84859527586
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3698094
- language
- English
- LU publication?
- yes
- id
- c3c278e1-cd14-4e64-8394-b873445a2f58 (old id 2435560)
- alternative location
- http://link.aip.org/link/?APL/100/132905
- date added to LUP
- 2016-04-01 10:47:25
- date last changed
- 2022-04-28 01:28:50
@article{c3c278e1-cd14-4e64-8394-b873445a2f58,
abstract = {{The influence of InAs orientations and high-k oxide deposition conditions on the electrical and<br/><br>
structural quality of Au/W/Al2O3/InAs metal-oxide-semiconductor capacitors was investigated<br/><br>
using capacitance-voltage (C-V) and x-ray photoemission spectroscopy techniques. The results<br/><br>
suggest that the interface traps around the conduction band edge are correlated to the As-oxide<br/><br>
amount, while less to those of As-As bonds and In-oxides. The quality of the deposited Al oxide<br/><br>
determines the border trap density, hence the capacitance frequency dispersion. The comparison of<br/><br>
different processing conditions is discussed, favoring a 350 C high-k oxide deposition on (111)B<br/><br>
substrates followed by an annealing procedure at 400 oC.}},
author = {{Wu, Jun and Lind, Erik and Timm, Rainer and Hjort, Martin and Mikkelsen, Anders and Wernersson, Lars-Erik}},
issn = {{0003-6951}},
keywords = {{Interface; InAs; High k; MOS capacitors}},
language = {{eng}},
number = {{13}},
pages = {{3--132905}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates}},
url = {{https://lup.lub.lu.se/search/files/2138023/2438160.pdf}},
doi = {{10.1063/1.3698094}},
volume = {{100}},
year = {{2012}},
}