Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Crystal structure of branched epitaxial III-V nanotrees

Karlsson, Lisa LU ; Larsson, Magnus LU ; Malm, Jan-Olle LU ; Wallenberg, Reine LU ; Dick Thelander, Kimberly LU ; Deppert, Knut LU orcid ; Seifert, Werner LU and Samuelson, Lars LU (2006) In Nano 1(2). p.139-151
Abstract
In this review we discuss the morphology and crystal structure of branched epitaxial III-V semiconductor structures, so called nanotrees, based on our own work with GaP, InAs and GaP/InP. These structures are formed by epitaxial growth in a step-wise procedure where each level can be individually controlled in terms of diameter, length and composition. Poly-typism is commonly observed for III-Vs with zinc blende, wurtzite or combinations thereof as the resulting crystal structure. Here we review GaP as an example of zinc blende and InAs of wurtzite type of growth in terms of nanotrees with two to three levels of growth. Included are also previously unpublished results on the growth of GaP/InP nanotrees to demonstrate effects of... (More)
In this review we discuss the morphology and crystal structure of branched epitaxial III-V semiconductor structures, so called nanotrees, based on our own work with GaP, InAs and GaP/InP. These structures are formed by epitaxial growth in a step-wise procedure where each level can be individually controlled in terms of diameter, length and composition. Poly-typism is commonly observed for III-Vs with zinc blende, wurtzite or combinations thereof as the resulting crystal structure. Here we review GaP as an example of zinc blende and InAs of wurtzite type of growth in terms of nanotrees with two to three levels of growth. Included are also previously unpublished results on the growth of GaP/InP nanotrees to demonstrate effects of heteroepitaxial growth with substantial mismatch. For these structures a topotaxial growth behavior was observed with InP wires crawling along or spiraling around the GaP nanowires acting as a free-standing substrates. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
metal-organic vapor phase epitaxy (MOVPE), crystal structure, III-V, nanotrees, TEM
in
Nano
volume
1
issue
2
pages
139 - 151
publisher
World Scientific Publishing
external identifiers
  • wos:000202998600003
ISSN
1793-2920
DOI
10.1142/S1793292006000203
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
c918b532-f8f4-47c0-b438-b8b366514851 (old id 1410555)
date added to LUP
2016-04-01 12:24:26
date last changed
2019-03-08 03:29:42
@article{c918b532-f8f4-47c0-b438-b8b366514851,
  abstract     = {{In this review we discuss the morphology and crystal structure of branched epitaxial III-V semiconductor structures, so called nanotrees, based on our own work with GaP, InAs and GaP/InP. These structures are formed by epitaxial growth in a step-wise procedure where each level can be individually controlled in terms of diameter, length and composition. Poly-typism is commonly observed for III-Vs with zinc blende, wurtzite or combinations thereof as the resulting crystal structure. Here we review GaP as an example of zinc blende and InAs of wurtzite type of growth in terms of nanotrees with two to three levels of growth. Included are also previously unpublished results on the growth of GaP/InP nanotrees to demonstrate effects of heteroepitaxial growth with substantial mismatch. For these structures a topotaxial growth behavior was observed with InP wires crawling along or spiraling around the GaP nanowires acting as a free-standing substrates.}},
  author       = {{Karlsson, Lisa and Larsson, Magnus and Malm, Jan-Olle and Wallenberg, Reine and Dick Thelander, Kimberly and Deppert, Knut and Seifert, Werner and Samuelson, Lars}},
  issn         = {{1793-2920}},
  keywords     = {{metal-organic vapor phase epitaxy (MOVPE); crystal structure; III-V; nanotrees; TEM}},
  language     = {{eng}},
  number       = {{2}},
  pages        = {{139--151}},
  publisher    = {{World Scientific Publishing}},
  series       = {{Nano}},
  title        = {{Crystal structure of branched epitaxial III-V nanotrees}},
  url          = {{http://dx.doi.org/10.1142/S1793292006000203}},
  doi          = {{10.1142/S1793292006000203}},
  volume       = {{1}},
  year         = {{2006}},
}