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Impact of Acceleration Voltage on Cathodoluminescence for Defect Identification in InGaN Quantum Wells

Usman, Hira ; Bi, Zhaoxia LU orcid ; Samuelson, Lars LU and Gustafsson, Anders LU orcid (2025) International Conference on Display Technology, ICDT 2025 In Digest of Technical Papers - SID International Symposium 56. p.335-337
Abstract

Micro-LEDs have emerged as a hot research topic due to their potential for next-generation display and lighting applications, necessitating advanced characterization techniques to optimize their performance. This study demonstrates the advantage of cathodoluminescence in the scanning electron microscope to be a critical tool for the optical characterization of InGaN platelets with red quantum well emission. Emission spectra revealed red shifted quantum well peaks with respect to the barrier emission corresponding to quantum well emission, confirming an increased indium incorporation and a reduced bandgap, enabling deep red InGaN QW-emission. However, dark line defects, identified as stacking mismatch boundaries, and pinholes were... (More)

Micro-LEDs have emerged as a hot research topic due to their potential for next-generation display and lighting applications, necessitating advanced characterization techniques to optimize their performance. This study demonstrates the advantage of cathodoluminescence in the scanning electron microscope to be a critical tool for the optical characterization of InGaN platelets with red quantum well emission. Emission spectra revealed red shifted quantum well peaks with respect to the barrier emission corresponding to quantum well emission, confirming an increased indium incorporation and a reduced bandgap, enabling deep red InGaN QW-emission. However, dark line defects, identified as stacking mismatch boundaries, and pinholes were observed, acting as non-radiative recombination centers, and reducing emission intensity. Monochromatic cathodoluminescence imaging at varying acceleration voltages provided insights into defect propagation and spatial distribution by probing different layers in the sample, revealing inhomogeneities and compositional variations.

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Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Cathodoluminescence, InGaN/GaN, Micro-LED
host publication
2025 International Conference on Display Technology (ICDT 2025)
series title
Digest of Technical Papers - SID International Symposium
volume
56
edition
S1
pages
3 pages
conference name
International Conference on Display Technology, ICDT 2025
conference location
Xiamen, China
conference dates
2025-03-18 - 2025-03-21
external identifiers
  • scopus:105013025869
ISSN
0097-966X
DOI
10.1002/sdtp.18800
language
English
LU publication?
yes
id
dd0ff9f1-52a5-462e-80a2-613d3d0804e4
date added to LUP
2026-01-09 09:18:19
date last changed
2026-01-09 09:18:57
@inproceedings{dd0ff9f1-52a5-462e-80a2-613d3d0804e4,
  abstract     = {{<p>Micro-LEDs have emerged as a hot research topic due to their potential for next-generation display and lighting applications, necessitating advanced characterization techniques to optimize their performance. This study demonstrates the advantage of cathodoluminescence in the scanning electron microscope to be a critical tool for the optical characterization of InGaN platelets with red quantum well emission. Emission spectra revealed red shifted quantum well peaks with respect to the barrier emission corresponding to quantum well emission, confirming an increased indium incorporation and a reduced bandgap, enabling deep red InGaN QW-emission. However, dark line defects, identified as stacking mismatch boundaries, and pinholes were observed, acting as non-radiative recombination centers, and reducing emission intensity. Monochromatic cathodoluminescence imaging at varying acceleration voltages provided insights into defect propagation and spatial distribution by probing different layers in the sample, revealing inhomogeneities and compositional variations.</p>}},
  author       = {{Usman, Hira and Bi, Zhaoxia and Samuelson, Lars and Gustafsson, Anders}},
  booktitle    = {{2025 International Conference on Display Technology (ICDT 2025)}},
  issn         = {{0097-966X}},
  keywords     = {{Cathodoluminescence; InGaN/GaN; Micro-LED}},
  language     = {{eng}},
  pages        = {{335--337}},
  series       = {{Digest of Technical Papers - SID International Symposium}},
  title        = {{Impact of Acceleration Voltage on Cathodoluminescence for Defect Identification in InGaN Quantum Wells}},
  url          = {{http://dx.doi.org/10.1002/sdtp.18800}},
  doi          = {{10.1002/sdtp.18800}},
  volume       = {{56}},
  year         = {{2025}},
}