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High In-content InGaN nano-pyramids : Tuning crystal homogeneity by optimized nucleation of GaN seeds

Bi, Zhaoxia LU ; Gustafsson, Anders LU ; Lenrick, Filip LU ; Lindgren, David LU ; Hultin, Olof LU ; Wallenberg, L. Reine LU ; Ohlsson, B. Jonas LU ; Monemar, Bo LU and Samuelson, Lars LU (2018) In Journal of Applied Physics 123(2).
Abstract

Uniform arrays of submicron hexagonal InGaN pyramids with high morphological and material homogeneity, reaching an indium composition of 20%, are presented in this work. The pyramids were grown by selective area metal-organic vapor phase epitaxy and nucleated from small openings in a SiN mask. The growth selectivity was accurately controlled with diffusion lengths of the gallium and indium species, more than 1 μm on the SiN surface. High material homogeneity of the pyramids was achieved by inserting a precisely formed GaN pyramidal seed prior to InGaN growth, leading to the growth of well-shaped InGaN pyramids delimited by six equivalent 10 1 ̄ 1 facets. Further analysis reveals a variation in the indium composition to be mediated by... (More)

Uniform arrays of submicron hexagonal InGaN pyramids with high morphological and material homogeneity, reaching an indium composition of 20%, are presented in this work. The pyramids were grown by selective area metal-organic vapor phase epitaxy and nucleated from small openings in a SiN mask. The growth selectivity was accurately controlled with diffusion lengths of the gallium and indium species, more than 1 μm on the SiN surface. High material homogeneity of the pyramids was achieved by inserting a precisely formed GaN pyramidal seed prior to InGaN growth, leading to the growth of well-shaped InGaN pyramids delimited by six equivalent 10 1 ̄ 1 facets. Further analysis reveals a variation in the indium composition to be mediated by competing InGaN growth on two types of crystal planes, 10 1 ̄ 1 and (0001). Typically, the InGaN growth on 10 1 ̄ 1 planes is much slower than on the (0001) plane. The formation of the (0001) plane and the growth of InGaN on it were found to be dependent on the morphology of the GaN seeds. We propose growth of InGaN pyramids seeded by 10 1 ̄ 1-faceted GaN pyramids as a mean to avoid InGaN material grown on the otherwise formed (0001) plane, leading to a significant reduction of variations in the indium composition in the InGaN pyramids. The InGaN pyramids in this work can be used as a high-quality template for optoelectronic devices having indium-rich active layers, with a potential of reaching green, yellow, and red emissions for LEDs.

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published
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in
Journal of Applied Physics
volume
123
issue
2
publisher
American Institute of Physics
external identifiers
  • scopus:85040453652
ISSN
0021-8979
DOI
10.1063/1.5010237
language
English
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yes
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e2d2cedf-651c-464c-adfb-ed20ee96a629
date added to LUP
2018-01-22 10:40:00
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2018-01-22 10:40:00
@article{e2d2cedf-651c-464c-adfb-ed20ee96a629,
  abstract     = {<p>Uniform arrays of submicron hexagonal InGaN pyramids with high morphological and material homogeneity, reaching an indium composition of 20%, are presented in this work. The pyramids were grown by selective area metal-organic vapor phase epitaxy and nucleated from small openings in a SiN mask. The growth selectivity was accurately controlled with diffusion lengths of the gallium and indium species, more than 1 μm on the SiN surface. High material homogeneity of the pyramids was achieved by inserting a precisely formed GaN pyramidal seed prior to InGaN growth, leading to the growth of well-shaped InGaN pyramids delimited by six equivalent 10 1 ̄ 1 facets. Further analysis reveals a variation in the indium composition to be mediated by competing InGaN growth on two types of crystal planes, 10 1 ̄ 1 and (0001). Typically, the InGaN growth on 10 1 ̄ 1 planes is much slower than on the (0001) plane. The formation of the (0001) plane and the growth of InGaN on it were found to be dependent on the morphology of the GaN seeds. We propose growth of InGaN pyramids seeded by 10 1 ̄ 1-faceted GaN pyramids as a mean to avoid InGaN material grown on the otherwise formed (0001) plane, leading to a significant reduction of variations in the indium composition in the InGaN pyramids. The InGaN pyramids in this work can be used as a high-quality template for optoelectronic devices having indium-rich active layers, with a potential of reaching green, yellow, and red emissions for LEDs.</p>},
  articleno    = {025102},
  author       = {Bi, Zhaoxia and Gustafsson, Anders and Lenrick, Filip and Lindgren, David and Hultin, Olof and Wallenberg, L. Reine and Ohlsson, B. Jonas and Monemar, Bo and Samuelson, Lars},
  issn         = {0021-8979},
  language     = {eng},
  month        = {01},
  number       = {2},
  publisher    = {American Institute of Physics},
  series       = {Journal of Applied Physics},
  title        = {High In-content InGaN nano-pyramids : Tuning crystal homogeneity by optimized nucleation of GaN seeds},
  url          = {http://dx.doi.org/10.1063/1.5010237},
  volume       = {123},
  year         = {2018},
}