Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
(2009) In Journal of Vacuum Science and Technology B 27(5). p.2222-2226- Abstract
- InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society.... (More)
- InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859] (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1489540
- author
- Astromskas, Gvidas LU ; Wallenberg, Reine LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Journal of Vacuum Science and Technology B
- volume
- 27
- issue
- 5
- pages
- 2222 - 2226
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000270447400029
- scopus:70349675885
- ISSN
- 1520-8567
- DOI
- 10.1116/1.3222859
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- edfe7cc8-da5f-48e1-8b1b-c590cbad6739 (old id 1489540)
- date added to LUP
- 2016-04-01 12:29:29
- date last changed
- 2022-04-21 08:10:42
@article{edfe7cc8-da5f-48e1-8b1b-c590cbad6739,
abstract = {{InAs has been grown on W-GaAs patterned substrates using metal organic vapor phase epitaxy. It is shown that the W pattern guides the nucleation of the InAs on the GaAs substrate and that the islands formed may be used to embed metal features in a hybrid InAs/GaAs structure. A lower resistance (factor of 2) was measured for the hybrid structures as compared to reference structures. The reduction in the resistance is attributed to an increased carrier concentration as observed from Hall measurements on devices with different tungsten densities. Cross-sectional transmission electron microscopy investigations reveal a void-free overgrowth above the metal despite the large mismatch of the InAs/GaAs system. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3222859]}},
author = {{Astromskas, Gvidas and Wallenberg, Reine and Wernersson, Lars-Erik}},
issn = {{1520-8567}},
language = {{eng}},
number = {{5}},
pages = {{2222--2226}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Vacuum Science and Technology B}},
title = {{Electrical characterization of thin InAs films grown on patterned W/GaAs substrates}},
url = {{https://lup.lub.lu.se/search/files/2944683/1731337.pdf}},
doi = {{10.1116/1.3222859}},
volume = {{27}},
year = {{2009}},
}