Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study
(2004) In Journal of Crystal Growth 260(1-2). p.18-22- Abstract
- We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a... (More)
- We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a collector of reactants, enabling a liquid-phase-epitaxy-like growth with high growth rates at the GaAs (111)B/(Au,Ga) interface. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/291014
- author
- Borgström, Magnus LU ; Deppert, Knut LU ; Samuelson, Lars LU and Seifert, Werner LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- materials, semiconducting III-V, nanostructures, metalorganic vapor phase epitaxy
- in
- Journal of Crystal Growth
- volume
- 260
- issue
- 1-2
- pages
- 18 - 22
- publisher
- Elsevier
- external identifiers
-
- wos:000187730000004
- scopus:0242523149
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2003.08.009
- language
- English
- LU publication?
- yes
- id
- ee26dd43-70ad-4435-87a4-fbdf367ae2e9 (old id 291014)
- date added to LUP
- 2016-04-01 16:53:52
- date last changed
- 2022-03-22 21:57:06
@article{ee26dd43-70ad-4435-87a4-fbdf367ae2e9, abstract = {{We have investigated the Au-catalyzed GaAs <111 > B whisker growth under low-pressure metal-organic vapour phase epitaxy conditions. By varying the growth temperature we found a maximum in the whisker growth rate at about 450-475degreesC. With increasing temperature the growth rate decreases due to competing growth at the (111) substrate surface and at the {I 101 whisker side facets, which leads to significant tapering of the whiskers. For low temperatures, the growth rate R in the In R = f (1/T)-plot results in an Arrhenius activation energy of about 67-75 kJ/mol, a value which is in agreement with activation energies reported for low-temperature planar growth of GaAs from TMG and AsH3. The Au acts as a local catalyst and as a collector of reactants, enabling a liquid-phase-epitaxy-like growth with high growth rates at the GaAs (111)B/(Au,Ga) interface.}}, author = {{Borgström, Magnus and Deppert, Knut and Samuelson, Lars and Seifert, Werner}}, issn = {{0022-0248}}, keywords = {{materials; semiconducting III-V; nanostructures; metalorganic vapor phase epitaxy}}, language = {{eng}}, number = {{1-2}}, pages = {{18--22}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth study}}, url = {{http://dx.doi.org/10.1016/j.jcrysgro.2003.08.009}}, doi = {{10.1016/j.jcrysgro.2003.08.009}}, volume = {{260}}, year = {{2004}}, }