Fabrication of Si-based nanoimprint stamps with sub-20 nm features
(2002) Micro and Nano Engineering 2001 61-2. p.449-454- Abstract
- We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of... (More)
- We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/334092
- author
- Maximov, Ivan LU ; Sarwe, Eva-Lena LU ; Beck, Marc LU ; Deppert, Knut LU ; Graczyk, Mariusz LU ; Magnusson, Martin LU and Montelius, Lars LU
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- aerosols, electron beam lithography, nanoimprint, etching
- host publication
- MICROELECTRONIC ENGINEERING
- volume
- 61-2
- pages
- 449 - 454
- publisher
- Elsevier
- conference name
- Micro and Nano Engineering 2001
- conference dates
- 2001-09-16 - 2001-09-19
- external identifiers
-
- wos:000176594700060
- scopus:0036643783
- ISSN
- 1873-5568
- 0167-9317
- DOI
- 10.1016/S0167-9317(02)00488-4
- language
- English
- LU publication?
- yes
- id
- efd555fd-57dc-447a-9519-10a89b357c7b (old id 334092)
- date added to LUP
- 2016-04-01 11:38:40
- date last changed
- 2024-07-01 16:07:47
@inproceedings{efd555fd-57dc-447a-9519-10a89b357c7b, abstract = {{We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V.}}, author = {{Maximov, Ivan and Sarwe, Eva-Lena and Beck, Marc and Deppert, Knut and Graczyk, Mariusz and Magnusson, Martin and Montelius, Lars}}, booktitle = {{MICROELECTRONIC ENGINEERING}}, issn = {{1873-5568}}, keywords = {{aerosols; electron beam lithography; nanoimprint; etching}}, language = {{eng}}, pages = {{449--454}}, publisher = {{Elsevier}}, title = {{Fabrication of Si-based nanoimprint stamps with sub-20 nm features}}, url = {{http://dx.doi.org/10.1016/S0167-9317(02)00488-4}}, doi = {{10.1016/S0167-9317(02)00488-4}}, volume = {{61-2}}, year = {{2002}}, }