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Fabrication of Si-based nanoimprint stamps with sub-20 nm features

Maximov, Ivan LU ; Sarwe, Eva-Lena LU ; Beck, Marc LU ; Deppert, Knut LU orcid ; Graczyk, Mariusz LU ; Magnusson, Martin LU and Montelius, Lars LU (2002) Micro and Nano Engineering 2001 61-2. p.449-454
Abstract
We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of... (More)
We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V. (Less)
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author
; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
aerosols, electron beam lithography, nanoimprint, etching
host publication
MICROELECTRONIC ENGINEERING
volume
61-2
pages
449 - 454
publisher
Elsevier
conference name
Micro and Nano Engineering 2001
conference dates
2001-09-16 - 2001-09-19
external identifiers
  • wos:000176594700060
  • scopus:0036643783
ISSN
0167-9317
1873-5568
DOI
10.1016/S0167-9317(02)00488-4
language
English
LU publication?
yes
id
efd555fd-57dc-447a-9519-10a89b357c7b (old id 334092)
date added to LUP
2016-04-01 11:38:40
date last changed
2024-02-22 23:48:09
@inproceedings{efd555fd-57dc-447a-9519-10a89b357c7b,
  abstract     = {{We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V.}},
  author       = {{Maximov, Ivan and Sarwe, Eva-Lena and Beck, Marc and Deppert, Knut and Graczyk, Mariusz and Magnusson, Martin and Montelius, Lars}},
  booktitle    = {{MICROELECTRONIC ENGINEERING}},
  issn         = {{0167-9317}},
  keywords     = {{aerosols; electron beam lithography; nanoimprint; etching}},
  language     = {{eng}},
  pages        = {{449--454}},
  publisher    = {{Elsevier}},
  title        = {{Fabrication of Si-based nanoimprint stamps with sub-20 nm features}},
  url          = {{http://dx.doi.org/10.1016/S0167-9317(02)00488-4}},
  doi          = {{10.1016/S0167-9317(02)00488-4}},
  volume       = {{61-2}},
  year         = {{2002}},
}