Epitaxial III-V nanowires on silicon
(2004) In Nano Letters 4(10). p.1987-1990- Abstract
- We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/140838
- author
- Mårtensson, Thomas LU ; Svensson, C Patrik T ; Wacaser, Brent LU ; Larsson, Magnus LU ; Seifert, Werner LU ; Deppert, Knut LU ; Gustafsson, Anders LU ; Wallenberg, Reine LU and Samuelson, Lars LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 4
- issue
- 10
- pages
- 1987 - 1990
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000224514800032
- scopus:7544241259
- ISSN
- 1530-6992
- DOI
- 10.1021/nl0487267
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- f16f2f9b-e886-4026-bd0c-85ecfcd858ee (old id 140838)
- date added to LUP
- 2016-04-01 17:08:11
- date last changed
- 2023-10-17 11:07:46
@article{f16f2f9b-e886-4026-bd0c-85ecfcd858ee, abstract = {{We present results of ideal epitaxial nucleation and growth of III-V semiconductor nanowires on silicon substrates. This addresses the long-time challenge of integrating high performance III-V semiconductors with mainstream Si technology. Efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nanowires. We expect that advanced heterostructure devices, such as resonant tunneling diodes, superiattice device structures, and heterostructure photonic devices for on-chip communication, could now become available as complementary device technologies for integration with silicon.}}, author = {{Mårtensson, Thomas and Svensson, C Patrik T and Wacaser, Brent and Larsson, Magnus and Seifert, Werner and Deppert, Knut and Gustafsson, Anders and Wallenberg, Reine and Samuelson, Lars}}, issn = {{1530-6992}}, language = {{eng}}, number = {{10}}, pages = {{1987--1990}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Epitaxial III-V nanowires on silicon}}, url = {{http://dx.doi.org/10.1021/nl0487267}}, doi = {{10.1021/nl0487267}}, volume = {{4}}, year = {{2004}}, }