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Growth Mechanism of Self-Catalyzed Group III-V Nanowires.

Mandl, Bernhard LU ; Stangl, Julian ; Hilner, Emelie LU ; Zakharov, Alexei LU ; Hillerich, Karla LU ; Dey, Anil LU ; Samuelson, Lars LU ; Bauer, Günther ; Deppert, Knut LU orcid and Mikkelsen, Anders LU (2010) In Nano Letters 10(Online October 7, 2010). p.4443-4449
Abstract
Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be... (More)
Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described. (Less)
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author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
10
issue
Online October 7, 2010
pages
4443 - 4449
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000283907600025
  • pmid:20939507
  • scopus:78449313623
  • pmid:20939507
ISSN
1530-6992
DOI
10.1021/nl1022699
language
English
LU publication?
yes
id
f1fc4787-802b-49b6-930b-2f35107ba1f1 (old id 1711271)
date added to LUP
2016-04-01 14:40:02
date last changed
2025-10-14 12:22:42
@article{f1fc4787-802b-49b6-930b-2f35107ba1f1,
  abstract     = {{Group III-V nanowires offer the exciting possibility of epitaxial growth on a wide variety of substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free growth schemes are of particular relevance, to avoid impurities from the catalysts. While this type of growth is well-documented and some aspects are described, no detailed understanding of the nucleation and the growth mechanism has been developed. By combining a series of growth experiments using metal-organic vapor phase epitaxy, as well as detailed in situ surface imaging and spectroscopy, we gain deeper insight into nucleation and growth of self-seeded III-V nanowires. By this mechanism most work available in literature concerning this field can be described.}},
  author       = {{Mandl, Bernhard and Stangl, Julian and Hilner, Emelie and Zakharov, Alexei and Hillerich, Karla and Dey, Anil and Samuelson, Lars and Bauer, Günther and Deppert, Knut and Mikkelsen, Anders}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{Online October 7, 2010}},
  pages        = {{4443--4449}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Growth Mechanism of Self-Catalyzed Group III-V Nanowires.}},
  url          = {{http://dx.doi.org/10.1021/nl1022699}},
  doi          = {{10.1021/nl1022699}},
  volume       = {{10}},
  year         = {{2010}},
}