One-dimensional steeplechase for electrons realized
(2002) In Nano Letters 2(2). p.87-89- Abstract
- We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments of the whisker with different composition are formed, illustrated by InAs whiskers containing segments of InP. Our conditions for growth allow the formation of abrupt interfaces and heterostructure barriers of thickness from a few monolayers to 100s of nanometers, thus creating a one-dimensional landscape along which the electrons move. The crystalline perfection, the quality of the interfaces, and the variation in the lattice constant are demonstrated by high-resolution transmission electron microscopy, and the conduction band off-set of 0.6 eV is deduced from the current due to thermal excitation of electrons over an InP barrier.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/342756
- author
- Björk, Mikael LU ; Ohlsson, Jonas LU ; Sass, T ; Persson, Ann LU ; Thelander, Claes LU ; Magnusson, Martin LU ; Deppert, Knut LU ; Wallenberg, Reine LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 2
- issue
- 2
- pages
- 87 - 89
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000174078400003
- scopus:0003072296
- ISSN
- 1530-6992
- DOI
- 10.1021/nl010099n
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- f978929c-bbc4-45c3-9cb2-e90d62859ecf (old id 342756)
- date added to LUP
- 2016-04-01 15:40:08
- date last changed
- 2022-04-14 23:13:07
@article{f978929c-bbc4-45c3-9cb2-e90d62859ecf, abstract = {{We report growth of one-dimensional semiconductor nanocrystals, nanowhiskers, in which segments of the whisker with different composition are formed, illustrated by InAs whiskers containing segments of InP. Our conditions for growth allow the formation of abrupt interfaces and heterostructure barriers of thickness from a few monolayers to 100s of nanometers, thus creating a one-dimensional landscape along which the electrons move. The crystalline perfection, the quality of the interfaces, and the variation in the lattice constant are demonstrated by high-resolution transmission electron microscopy, and the conduction band off-set of 0.6 eV is deduced from the current due to thermal excitation of electrons over an InP barrier.}}, author = {{Björk, Mikael and Ohlsson, Jonas and Sass, T and Persson, Ann and Thelander, Claes and Magnusson, Martin and Deppert, Knut and Wallenberg, Reine and Samuelson, Lars}}, issn = {{1530-6992}}, language = {{eng}}, number = {{2}}, pages = {{87--89}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{One-dimensional steeplechase for electrons realized}}, url = {{http://dx.doi.org/10.1021/nl010099n}}, doi = {{10.1021/nl010099n}}, volume = {{2}}, year = {{2002}}, }