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High-Mobility GaSb Nanostructures Cointegrated with InAs on Si

Borg, Mattias LU ; Schmid, Heinz; Gooth, Johannes; Rossell, Marta D.; Cutaia, Davide; Knoedler, Moritz; Bologna, Nicolas; Wirths, Stephan; Moselund, Kirsten E. and Riel, Heike (2017) In ACS Nano 11(3). p.2554-2560
Abstract

GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm. Detailed investigation of growth parameters reveals that the GaSb growth rate is governed by the desorption processes of an Sb surface layer and, in turn, is insensitive to changes in material transport efficiency. The GaSb crystal structure is typically zinc-blende with a low density of rotational twin defects,... (More)

GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm. Detailed investigation of growth parameters reveals that the GaSb growth rate is governed by the desorption processes of an Sb surface layer and, in turn, is insensitive to changes in material transport efficiency. The GaSb crystal structure is typically zinc-blende with a low density of rotational twin defects, and even occasional twin-free structures are observed. Hall/van der Pauw measurements are conducted on 20 nm-thick GaSb nanostructures, revealing high hole mobility of 760 cm2/(V s), which matches literature values for high-quality bulk GaSb crystals. Finally, we demonstrate a process that enables cointegration of GaSb and InAs nanostructures in close vicinity on Si, a preferred material combination ideally suited for high-performance complementary III-V metal-oxide-semiconductor technology.

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Please use this url to cite or link to this publication:
author
publishing date
type
Contribution to journal
publication status
published
subject
keywords
cointegration, GaSb, hole mobility, InAs, Si, template-assisted selective epitaxy
in
ACS Nano
volume
11
issue
3
pages
7 pages
publisher
The American Chemical Society
external identifiers
  • scopus:85016393889
ISSN
1936-0851
DOI
10.1021/acsnano.6b04541
language
English
LU publication?
no
id
fb06d3bf-7923-45d7-88b3-5bca2489eb24
date added to LUP
2018-04-11 11:45:38
date last changed
2018-08-19 04:42:12
@article{fb06d3bf-7923-45d7-88b3-5bca2489eb24,
  abstract     = {<p>GaSb nanostructures integrated on Si substrates are of high interest for p-type transistors and mid-IR photodetectors. Here, we investigate the metalorganic chemical vapor deposition and properties of GaSb nanostructures monolithically integrated onto silicon-on-insulator wafers using template-assisted selective epitaxy. A high degree of morphological control allows for GaSb nanostructures with critical dimensions down to 20 nm. Detailed investigation of growth parameters reveals that the GaSb growth rate is governed by the desorption processes of an Sb surface layer and, in turn, is insensitive to changes in material transport efficiency. The GaSb crystal structure is typically zinc-blende with a low density of rotational twin defects, and even occasional twin-free structures are observed. Hall/van der Pauw measurements are conducted on 20 nm-thick GaSb nanostructures, revealing high hole mobility of 760 cm<sup>2</sup>/(V s), which matches literature values for high-quality bulk GaSb crystals. Finally, we demonstrate a process that enables cointegration of GaSb and InAs nanostructures in close vicinity on Si, a preferred material combination ideally suited for high-performance complementary III-V metal-oxide-semiconductor technology.</p>},
  author       = {Borg, Mattias and Schmid, Heinz and Gooth, Johannes and Rossell, Marta D. and Cutaia, Davide and Knoedler, Moritz and Bologna, Nicolas and Wirths, Stephan and Moselund, Kirsten E. and Riel, Heike},
  issn         = {1936-0851},
  keyword      = {cointegration,GaSb,hole mobility,InAs,Si,template-assisted selective epitaxy},
  language     = {eng},
  month        = {03},
  number       = {3},
  pages        = {2554--2560},
  publisher    = {The American Chemical Society},
  series       = {ACS Nano},
  title        = {High-Mobility GaSb Nanostructures Cointegrated with InAs on Si},
  url          = {http://dx.doi.org/10.1021/acsnano.6b04541},
  volume       = {11},
  year         = {2017},
}