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Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide

Timm, Rainer LU ; Head, Ashley R. LU ; Yngman, Sofie LU ; Knutsson, Johan V. LU ; Hjort, Martin LU ; McKibbin, Sarah R. LU ; Troian, Andrea LU ; Persson, Olof LU ; Urpelainen, Samuli LU and Knudsen, Jan LU , et al. (2018) In Nature Communications 9(1).
Abstract

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer... (More)

Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.

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published
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Nature Communications
volume
9
issue
1
publisher
Nature Publishing Group
external identifiers
  • scopus:85045517985
ISSN
2041-1723
DOI
10.1038/s41467-018-03855-z
language
English
LU publication?
yes
id
fd83abae-a4a5-4a91-b0d7-9e7987c6870f
date added to LUP
2018-04-26 08:14:00
date last changed
2019-08-14 04:15:16
@article{fd83abae-a4a5-4a91-b0d7-9e7987c6870f,
  abstract     = {<p>Atomic layer deposition (ALD) enables the ultrathin high-quality oxide layers that are central to all modern metal-oxide-semiconductor circuits. Crucial to achieving superior device performance are the chemical reactions during the first deposition cycle, which could ultimately result in atomic-scale perfection of the semiconductor-oxide interface. Here, we directly observe the chemical reactions at the surface during the first cycle of hafnium dioxide deposition on indium arsenide under realistic synthesis conditions using photoelectron spectroscopy. We find that the widely used ligand exchange model of the ALD process for the removal of native oxide on the semiconductor and the simultaneous formation of the first hafnium dioxide layer must be significantly revised. Our study provides substantial evidence that the efficiency of the self-cleaning process and the quality of the resulting semiconductor-oxide interface can be controlled by the molecular adsorption process of the ALD precursors, rather than the subsequent oxide formation.</p>},
  articleno    = {1412},
  author       = {Timm, Rainer and Head, Ashley R. and Yngman, Sofie and Knutsson, Johan V. and Hjort, Martin and McKibbin, Sarah R. and Troian, Andrea and Persson, Olof and Urpelainen, Samuli and Knudsen, Jan and Schnadt, Joachim and Mikkelsen, Anders},
  issn         = {2041-1723},
  language     = {eng},
  month        = {12},
  number       = {1},
  publisher    = {Nature Publishing Group},
  series       = {Nature Communications},
  title        = {Self-cleaning and surface chemical reactions during hafnium dioxide atomic layer deposition on indium arsenide},
  url          = {http://dx.doi.org/10.1038/s41467-018-03855-z},
  volume       = {9},
  year         = {2018},
}