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GaAsP Nanowires Grown by Aerotaxy

Metaferia, Wondwosen LU ; Persson, Axel R. LU ; Mergenthaler, Kilian LU ; Yang, Fangfang LU ; Zhang, Wei LU ; Yartsev, Arkady LU ; Wallenberg, Reine LU ; Pistol, Mats Erik LU ; Deppert, Knut LU and Samuelson, Lars LU , et al. (2016) In Nano Letters 16(9). p.5701-5707
Abstract

We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and... (More)

We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH3/AsH3 ratio and growth temperature, size selected GaAs1-xPx nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires.

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organization
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Contribution to journal
publication status
published
subject
keywords
Aerotaxy, GaAsP nanowires, gas phase, zincblende
in
Nano Letters
volume
16
issue
9
pages
7 pages
publisher
The American Chemical Society
external identifiers
  • scopus:84987762186
  • wos:000383412100057
ISSN
1530-6984
DOI
10.1021/acs.nanolett.6b02367
language
English
LU publication?
yes
id
ff252a84-f77f-48b7-a4c2-c65218a2e726
date added to LUP
2016-11-04 09:55:04
date last changed
2017-10-22 05:21:28
@article{ff252a84-f77f-48b7-a4c2-c65218a2e726,
  abstract     = {<p>We have grown GaAsP nanowires with high optical and structural quality by Aerotaxy, a new continuous gas phase mass production process to grow III-V semiconductor based nanowires. By varying the PH<sub>3</sub>/AsH<sub>3</sub> ratio and growth temperature, size selected GaAs<sub>1-x</sub>P<sub>x</sub> nanowires (80 nm diameter) with pure zinc-blende structure and with direct band gap energies ranging from 1.42 to 1.90 eV (at 300 K), (i.e., 0 ≤ x ≤ 0.43) were grown, which is the energy range needed for creating tandem III-V solar cells on silicon. The phosphorus content in the NWs is shown to be controlled by both growth temperature and input gas phase ratio. The distribution of P in the wires is uniform over the length of the wires and among the wires. This proves the feasibility of growing GaAsP nanowires by Aerotaxy and results indicate that it is a generic process that can be applied to the growth of other III-V semiconductor based ternary nanowires.</p>},
  author       = {Metaferia, Wondwosen and Persson, Axel R. and Mergenthaler, Kilian and Yang, Fangfang and Zhang, Wei and Yartsev, Arkady and Wallenberg, Reine and Pistol, Mats Erik and Deppert, Knut and Samuelson, Lars and Magnusson, Martin H.},
  issn         = {1530-6984},
  keyword      = {Aerotaxy,GaAsP nanowires,gas phase,zincblende},
  language     = {eng},
  month        = {09},
  number       = {9},
  pages        = {5701--5707},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {GaAsP Nanowires Grown by Aerotaxy},
  url          = {http://dx.doi.org/10.1021/acs.nanolett.6b02367},
  volume       = {16},
  year         = {2016},
}