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- 2010
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Mark
Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires.
(
- Contribution to journal › Article
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Mark
High performance single nanowire tunnel diodes
2010) MRS Spring Meeting, 2010(
- Contribution to conference › Paper, not in proceeding
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Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
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Mark
High-Performance Single Nanowire Tunnel Diodes.
(
- Contribution to journal › Article
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Mark
Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
(
- Contribution to journal › Article
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Mark
Nanowires with promise for photovoltaics, growth and characterisation
2010) 8th intl workshop on epitaxial semiconductors on patterned substrates and novel index surfaces(
- Contribution to conference › Paper, not in proceeding
-
Mark
Vertical dual wrapgated-induced field effect diode
2010) 30th International Conference on the Physics of Semiconductors, 2010(
- Contribution to conference › Paper, not in proceeding
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Mark
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
(
- Contribution to journal › Article
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Mark
Bias-controlled friction of InAs nanowires on a silicon nitride layer studied by atomic force microscopy
(
- Contribution to journal › Article
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Mark
In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
(
- Contribution to journal › Article