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- 2012
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Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(
- Contribution to journal › Article
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Mark
High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowires
(
- Contribution to journal › Article
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Mark
Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
(
- Contribution to journal › Article
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Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract