11 – 18 of 18
- show: 10
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- « previous
- 1
- 2
- next »
- 2009
-
Mark
The ratio of interstitial to substitutional site occupation by Mn atoms in GaAs estimated by EXAFS
2009) 9th International School and Symposium on Synchrotron Radiation in Natural Science (ISSRNS-9) 78. p.80-85(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Photoemission from alpha and beta phases of the GaAs(001)-c(4 x 4) surface
(
- Contribution to journal › Article
- 2008
-
Mark
Bismuth-stabilized (2x1) and (2x4) reconstructions on GaAs(100) surfaces: Combined first-principles, photoemission, and scanning tunneling microscopy study
(
- Contribution to journal › Article
-
Mark
Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors
(
- Contribution to journal › Article
- 2004
-
Mark
Electron mean free path for GaAs(100)-c(4x4) at very low energies
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Photoemission study of LT-GaAs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2002
-
Mark
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
(
- Contribution to journal › Article
- 2001
-
Mark
Metal and Semiconductor Nanocrystals for Quantum Devices
2001)(
- Thesis › Doctoral thesis (compilation)
- « previous
- 1
- 2
- next »