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- 2018
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Mark
A 128 kb 7T SRAM Using a Single-Cycle Boosting Mechanism in 28 nm FD–SOI
(
- Contribution to journal › Article
- 2016
-
Mark
A 128 Kb Single-Bitline 8.4 fJ/Bit 90MHz at 0.3V 7T Sense-Amplifierless SRAM in 28 nm FD-SOI
2016) European Solid-State Circuits Conference (ESSCIRC). 2016(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding