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- 2011
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Mark
Transient studies on InAs/HfO2 nanowire capacitors
(
- Contribution to journal › Article
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Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
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Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
Analysis of InAs/HfO2 nanowire CV characteristics
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
- 2009
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Mark
Growth of vertical InAs nanowires on heterostructured substrates
(
- Contribution to journal › Article
- 2008
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Mark
InAs nanowire metal-oxide-semiconductor capacitors
(
- Contribution to journal › Article
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Mark
Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires
(
- Contribution to journal › Article