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- 2005
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Mark
Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
(
- Contribution to journal › Article
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Mark
Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
(
- Contribution to journal › Article
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Mark
Thermal double donor annihilation and oxygen precipitation at around 650 degrees C in Czochralski-grown Si: local vibrational mode studies
(
- Contribution to journal › Article
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Mark
Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies
(
- Contribution to journal › Article
- 2003
-
Mark
Resonant interaction between localized and extended vibrational modes in Si: O-18 under pressure
(
- Contribution to journal › Article
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Mark
Spectroscopic observation of the TDD0 in silicon
(
- Contribution to journal › Article
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Mark
Vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
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Mark
The VO2* defect in silicon
(
- Contribution to journal › Article
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Mark
Stable hydrogen pair trapped at carbon impurities in silicon
(
- Contribution to journal › Article
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Mark
Defect reactions associated with divacancy elimination in silicon
(
- Contribution to journal › Article