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- 2010
-
Mark
Vertical InAs nanowire wrap gate transistors for integration on a Si platform
2010) GigaHertz Symposium, 2010(
- Contribution to conference › Paper, not in proceeding
-
Mark
Analysis of InAs/HfO2 nanowire CV characteristics
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding
-
Mark
Tunneling-based devices and circuits
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2009
-
Mark
Electrical characterization of thin InAs films grown on patterned W/GaAs substrates
(
- Contribution to journal › Article
-
Mark
Giant, level-dependent g factors in InSb nanowire quantum dots.
(
- Contribution to journal › Article
-
Mark
MOVPE Growth and Structural Characterization of Extremely Lattice-Mismatched InP-InSB Nanowire Heterostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Growth of vertical InAs nanowires on heterostructured substrates
(
- Contribution to journal › Article
-
Mark
InSb heterostructure nanowires: MOVPE growth under extreme lattice mismatch.
(
- Contribution to journal › Article
-
Mark
Gated tunnel diode in oscillator applications with high frequency tuning
(
- Contribution to journal › Article
-
Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding