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- 2012
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Mark
A comparative study of nanowire-based infrared p+-i-n+ photodetectors
2012) ICPS 2012(
- Contribution to conference › Abstract
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Mark
Realizing lateral wrap-gated nanowire FETs: Controlling gate length with chemistry rather than lithography
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.
(
- Contribution to journal › Article
-
Mark
Transient studies on InAs/HfO2 nanowire capacitors
(
- Contribution to journal › Article
-
Mark
Scanning gate imaging of quantum dots in 1D ultra-thin InAs/InP nanowires
(
- Contribution to journal › Article
-
Mark
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Dual-gate induced InP nanowire diode
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2010
-
Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
A comparative study of the effect of gold seed particle preparation method on nanowire growth
(
- Contribution to journal › Article
-
Mark
Vertical dual wrapgated-induced field effect diode
2010) 30th International Conference on the Physics of Semiconductors, 2010(
- Contribution to conference › Paper, not in proceeding