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- 2002
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Mark
A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Attractive potential around a buried metallic gate in a Schottky Collector Hot Electron Transistor
(
- Contribution to journal › Article
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Mark
Coupling between lateral modes in a vertical resonant tunneling structure
(
- Contribution to journal › Article
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Mark
Designed emitter states in resonant tunneling through quantum dots
(
- Contribution to journal › Article
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Mark
Thin layers of GaInP, GaP and GaAsP in metalorganic vapour phase epitaxy-grown resonant tunnelling diodes
(
- Contribution to journal › Article
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Mark
Epitaxially overgrown, stable W-GaAs Schottky contacts with sizes down to 50 nm
(
- Contribution to journal › Article
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Mark
Nano-scale Schottky contacts: ultrafast drift-diffusion dynamics studied in the optical near field
(
- Contribution to journal › Article
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Mark
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
(
- Contribution to journal › Article
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Mark
Carrier and field dynamics around nanoscale Schottky contacts investigated by ultrafast near-field optics
(
- Contribution to journal › Article
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Mark
Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding