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- 2012
-
Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article
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Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(
- Contribution to journal › Article
-
Mark
Heterointerface Control in III-V Semiconductor Nanowires
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.
(
- Contribution to journal › Article