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- 2012
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Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults.
(
- Contribution to journal › Article
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Mark
High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
(
- Contribution to journal › Article
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Mark
Electron Transfer in Quantum-Dot-Sensitized ZnO Nanowires: Ultrafast Time-Resolved Absorption and Terahertz Study
(
- Contribution to journal › Article
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Mark
Continuous gas-phase synthesis of nanowires with tunable properties.
(
- Contribution to journal › Article
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Mark
Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(
- Contribution to journal › Article
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Mark
High-Resolution Fluorescence Diffuse Optical Tomography Developed with Nonlinear Upconverting Nanoparticles
(
- Contribution to journal › Article
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Mark
Growth of Straight InAs-on-GaAs Nanowire Heterostructures
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
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Mark
GaInP Nanowire p-i-n Junctions with Electroluminescence at 569 nm near the Direct to Indirect Bandgap Crossover
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
Electron Trapping in InP Nanowire FETs with Stacking Faults
2012) MRS Spring Meeting, 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.
(
- Contribution to journal › Article