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- 2010
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Mark
Reduction of native oxides on InAs by atomic layer deposited Al2O3 and HfO2
(
- Contribution to journal › Letter
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Mark
Structure, mechanics and conductivity of semiconductor nanowires using scanning tunneling microscopy
2010) 18th International Vacuum Congress, 2010(
- Contribution to conference › Paper, not in proceeding
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Mark
High-k oxides on (100), (111)A and (111)B InAs substrates
2010) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials(
- Contribution to conference › Paper, not in proceeding