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- 2016
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Mark
Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties
2016) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 129(1). p.90-93(
- Contribution to journal › Article
- 2011
-
Mark
Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
(
- Contribution to journal › Article
- 2010
-
Mark
As3d core level studies of (GaMn)As annealed under As capping
(
- Contribution to journal › Article
-
Mark
Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure
2010) 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 3. p.1357-1362(
- Chapter in Book/Report/Conference proceeding › Book chapter
- 2007
-
Mark
Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping
(
- Contribution to journal › Article
- 2006
-
Mark
Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
(
- Contribution to journal › Article
- 2005
-
Mark
Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
(
- Contribution to journal › Article
- 2004
-
Mark
A study of the surface structure and composition of annealed Ga0.96Mn0.04As(100)
(
- Contribution to journal › Article
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