1 – 18 of 18
- show: 50
- |
- sort: year (new to old)
Close
Embed this list
<iframe src=" "
width=" "
height=" "
allowtransparency="true"
frameborder="0">
</iframe>
- 2019
-
Mark
Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy
(
- Contribution to journal › Article
-
Mark
Bi ultra-thin crystalline films on InAs(1 1 1)A and B substrates : A combined core-level and valence-band angle-resolved and dichroic photoemission study
(
- Contribution to journal › Article
- 2018
-
Mark
Cubic anisotropy in (Ga,Mn)As layers : Experiment and theory
(
- Contribution to journal › Article
-
Mark
Band structure evolution and the origin of magnetism in (Ga,Mn)As : From paramagnetic through superparamagnetic to ferromagnetic phase
(
- Contribution to journal › Article
- 2017
-
Mark
Off-axis electron holography of magnetic nanostructures : Magnetic behavior of mn rich nanoprecipitates in (Mn,Ga)as system
(
- Contribution to journal › Article
-
Mark
FIB method of sectioning of III–V core-multi-shell nanowires for analysis of core/sell interfaces by high resolution TEM
(
- Contribution to journal › Article
-
Mark
Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties
(
- Contribution to journal › Article
-
Mark
Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As) : Magnetic and Magneto-Transport Investigations
(
- Contribution to journal › Article
- 2016
-
Mark
Characterization of non-vertically aligned semiconductor nanowires by THz emission measurements
2016) 41st International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2016 2016-November.(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Effect of misfit strain in (Ga,Mn)(Bi,As) epitaxial layers on their magnetic and magneto-transport properties
2016) In Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics 129(1). p.90-93(
- Contribution to journal › Article
-
Mark
Thermally activated decomposition of (Ga,Mn)As thin layer at medium temperature post growth annealing
(
- Contribution to journal › Article
- 2011
-
Mark
Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
(
- Contribution to journal › Article
- 2010
-
Mark
As3d core level studies of (GaMn)As annealed under As capping
(
- Contribution to journal › Article
-
Mark
Angle-resolved photoemission study and pseudopotential calculations of GeTe and Ge1-xMnxTe band structure
2010) 14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 3. p.1357-1362(
- Chapter in Book/Report/Conference proceeding › Book chapter
- 2007
-
Mark
Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping
(
- Contribution to journal › Article
- 2006
-
Mark
Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
(
- Contribution to journal › Article
- 2005
-
Mark
Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
(
- Contribution to journal › Article
- 2004
-
Mark
A study of the surface structure and composition of annealed Ga0.96Mn0.04As(100)
(
- Contribution to journal › Article