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- 2005
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Mark
Electrically active radiation-induced defects in Czochralski-grown Si with low carbon content
(
- Contribution to journal › Article
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Mark
Metastable VO2 complexes in silicon: experimental and theoretical modeling studies
(
- Contribution to journal › Article
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Mark
Electronic properties and structure of a complex incorporating a self-interstitial and two oxygen atoms in silicon
(
- Contribution to journal › Article
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Mark
Interstitial carbon related defects in low-temperature irradiated Si: FTIR and DLTS studies
(
- Contribution to journal › Article
- 2003
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Mark
Effect of high hydrostatic pressure on small oxygen-related clusters in silicon: LVM studies
(
- Contribution to journal › Article
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Mark
Spectroscopic observation of the TDD0 in silicon
(
- Contribution to journal › Article
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Mark
The VO2* defect in silicon
(
- Contribution to journal › Article
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Mark
Defect reactions associated with divacancy elimination in silicon
(
- Contribution to journal › Article
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Mark
Vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
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Mark
Stable hydrogen pair trapped at carbon impurities in silicon
(
- Contribution to journal › Article
- 2002
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Mark
Vibrational modes of oxygen dimers in germanium
(
- Contribution to journal › Article
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Mark
Local vibrational modes of the oxygen-vacancy complex in germanium
(
- Contribution to journal › Article
-
Mark
Electronic properties of vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
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Mark
Carbon-oxygen-related complexes in irradiated and heat-treated silicon: IR absorption studies
(
- Contribution to journal › Article
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Mark
Defect engineering in Czochralski silicon by electron irradiation at different temperatures
2002) E-MRS 2001 Spring Meeting Symposium B Defect Engineering of Advanced Semiconductor Devices 186(1). p.121-125(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding