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2020
Mark Design of Two 28 GHz Doherty Power Amplifier Topologies with Vertical In(Ga)As Nanowire Transistors
Olson, Simon ^LU and Nilsson-Villoresi, Lucas (2020) EITM01 20201
Department of Electrical and Information Technology
- Master (Two yrs)
2018
Mark Capacitance Optimization and Ballistic Modeling of Nanowire Transistors
Alothmani, Azal ^LU (2018) EITM01 20181
Department of Electrical and Information Technology
- Master (Two yrs)
Mark Development of III-V RF Nanowire MOSFETs
Rost, Josefine ^LU and Wagnström, Anna ^LU (2018) EITM01 20181
Department of Electrical and Information Technology
- Master (Two yrs)
2017
Mark Modelling Graphene Field-Effect Transistors
Sjölander, Sofia ^LU (2017) EITM01 20171
Department of Electrical and Information Technology
- Master (Two yrs)
Mark Low-Frequency Noise in InGaAs Nanowire MOSFETs
Möhle, Christian Mario ^LU (2017) FYSM60 20171
Solid State Physics
Department of Physics
- Master (Two yrs)
Mark Ballistic Modeling of Nanowire MOSFETs
Nilsson Södergren, Lasse ^LU (2017) EITM01 20171
Department of Electrical and Information Technology
- Master (Two yrs)
2015
Mark Optimizing the RF-parameters for an III-V FinFET
Sjöberg, Hugo ^LU (2015) EITM01 20151
Department of Electrical and Information Technology
- Master (Two yrs)
Mark Hall Measurement on Regrown Nanowires
Sivakumar, Sudhakar ^LU (2015) FYSM60 20151
Department of Physics
- Master (Two yrs)
2013
Mark Development of Ni-based Ohmic contacts to InAs and InGaAs
Cha, Eunjung ^LU (2013) EITM01 20122
Department of Electrical and Information Technology
- Master (Two yrs)

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your query:: Remove supervisor: Lind, Erik